CSD87384MT

Overview

The CSD87384MT is a dual N-channel NexFET Power Block II MOSFET manufactured by Texas Instruments. It features a PTAB-5 surface-mount package and operates within a temperature range of -55°C to +150°C. Key electrical specifications include a drain-source breakdown voltage (Vds) of 30 V and a continuous drain current (Id) of 30 A. The device exhibits low on-resistance values of 6.4 mΩ and 1.95 mΩ, with a gate charge (Qg) ranging from 9.2 nC to 40 nC. Gate-source voltage limits are specified at -8 V and 10 V, while the threshold voltage (Vgs th) ranges between 1.7 V and 1.9 V. Power dissipation is rated at 8 W, with rise times of 56 ns and 49 ns, and fall times of 7.6 ns and 8.2 ns.

Feature Summary

• Integrated dual N-channel configuration in a compact PTAB-5 package for space-constrained designs.
• Low on-resistance characteristics to minimize conduction losses in synchronous buck applications.
• Enhanced switching performance with optimized gate charge and fast transition times.

Applications

• Synchronous buck power conversion circuits
• Point-of-load (POL) voltage regulation modules
• High-efficiency DC-DC converter stages

Procurement Notes

Verify the specific suffix 'MT' against official Texas Instruments documentation to confirm packaging type and reel specifications. Ensure compatibility with PTAB-5 footprint requirements during procurement planning. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and traceability before purchase.

Selection Notes

Select this component when a 30 V rating and 30 A continuous current capability are required in a dual-channel format. Evaluate the 6.4 mΩ and 1.95 mΩ Rds(on) values against thermal management constraints. Confirm that the gate drive voltage aligns with the specified Vgs limits and threshold range for optimal switching efficiency.

Part Context

This part belongs to the CSD87384M series of NexFET Power Block II devices. It shares functional similarities with other members like the CSD87381P but offers higher current handling capabilities. The series is designed for high-density power applications requiring integrated dual MOSFET solutions.

Replacement Considerations

Direct substitutes within the same family include the CSD87384M. Verify pinout and thermal pad configurations match the PTAB-5 package before substitution.

FAQ

What is the maximum operating temperature for the CSD87384MT?

The maximum operating temperature is +150°C.

Does the CSD87384MT support negative gate-source voltage?

Yes, the gate-source voltage specification includes a minimum limit of -8 V.

What is the typical gate charge value for this device?

The gate charge ranges from 9.2 nC to 40 nC depending on test conditions.