CSD87502Q2

$0.43

Description：MOSFET 2N-CH 30V 5A 6WSON
Series：NexFET™

SKU:2f787e2eeeb0 Category: FET, MOSFET Arrays Brand: Texas Instruments

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 5A 6WSON
Series：NexFET™
Mfr：Texas Instruments
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：5A
Rds On (Max) @ Id, Vgs：32.4mOhm @ 4A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：353pF @ 15V
Power - Max：2.3W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-WDFN Exposed Pad
Supplier Device Package：6-WSON (2x2)
Grade：-
Qualification：-

Download product information

CSD87502Q2

Overview

The CSD87502Q2 is a dual N-channel NexFET power MOSFET manufactured by Texas Instruments. It features a 30 V drain-source breakdown voltage and supports a continuous drain current of 5 A. The device exhibits a maximum on-resistance of 35 mΩ at room temperature, with a gate threshold voltage of 1.6 V and a total gate charge of 2.2 nC. Operating within a temperature range of -55°C to +150°C, it dissipates up to 2.3 W of power. The component utilizes a WSON-FET-6 surface-mount package and operates in enhancement mode.

Feature Summary

Dual configuration integrating two independent N-channel transistors within a single compact footprint.
NexFET technology architecture designed for high efficiency and low conduction losses.
Enhancement-mode operation compatible with standard logic-level gate drive requirements.

Applications

DC-DC converter synchronous rectification stages
Low-voltage load switching circuits
Power management modules requiring compact form factors

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm exact packaging specifications such as reel size or tape dimensions. Ensure that the procurement channel provides traceability to the original equipment manufacturer to guarantee component authenticity and compliance with RoHS directives.

Selection Notes

Select this component when system design requires a dual N-channel topology with a 30 V voltage rating. Evaluate the 35 mΩ on-resistance against thermal constraints to ensure the 2.3 W power dissipation limit is not exceeded during continuous operation. Confirm that the WSON-FET-6 package dimensions fit the available printed circuit board layout area.

Part Context

This part belongs to the CSD87502 series of NexFET power MOSFETs from Texas Instruments. The series focuses on providing integrated dual-channel solutions for space-constrained applications. The Q2 suffix typically denotes specific manufacturing lot or packaging variations defined by the manufacturer.