CSD87503Q3ET

Overview

The CSD87503Q3ET is a dual N-channel MOSFET from the NexFET family, manufactured by Texas Instruments. It features a VSON-8 surface-mount package and utilizes silicon technology. Key electrical parameters include a drain-source breakdown voltage (Vds) of 30 V, a continuous drain current (Id) of 10 A, and a maximum on-resistance (Rds On) of 17.3 mΩ. The device operates with a gate-source voltage range of ±20 V and has a threshold voltage (Vgs th) of 1.3 V. Gate charge (Qg) is 42.8 nC, with rise and fall times of 40 ns and 8 ns respectively. It supports a power dissipation of 15.6 W and functions within a temperature range of -55°C to +150°C.

Feature Summary

• Dual channel configuration for space-efficient circuit design
• Low on-resistance for improved power efficiency
• Enhancement mode operation for standard logic control

Applications

• Power management systems requiring compact dual-switch solutions
• DC-DC converter topologies utilizing low-voltage synchronous rectification
• Load switching applications in portable electronic devices

Procurement Notes

Verify the specific ordering suffix 'ET' against the manufacturer's official datasheet to confirm tape-and-reel packaging specifications. Ensure compatibility with the required VSON-8 footprint and thermal pad requirements during PCB layout. Cross-reference the RoHS compliance status with current environmental regulations before finalizing procurement orders.

Selection Notes

Select this component when a dual N-channel configuration is required within a small VSON-8 footprint. The 30 V rating suits low-voltage DC bus applications. Evaluate the 17.3 mΩ Rds On against thermal constraints for the intended load current. Confirm that the 10 A continuous current rating meets the system's peak and steady-state demands without exceeding junction temperature limits.

Part Context

This part belongs to the CSD87503Q3E series, which is part of Texas Instruments' NexFET portfolio. The series focuses on high-performance power switching in compact packages. The Q3E designation typically indicates specific pinout or internal configuration variations within the broader CSD87503 family, designed for integration into modern power management ICs and discrete switcher designs.

Replacement Considerations

Consult the official Texas Instruments selection guide for direct replacements within the CSD87503 series. Verify pin-to-pin compatibility and electrical parameter equivalence for any alternative dual N-channel MOSFETs in the VSON-8 package.