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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 15A 8SOIC
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：15A
- Rds On (Max) @ Id, Vgs：28mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：3.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：9.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：741pF @ 30V
- Power - Max：2.1W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The CSD88539NDT is a dual N-channel NexFET power MOSFET manufactured by Texas Instruments. It features a 60 V drain-source breakdown voltage and a continuous drain current of 11.7 A. The device exhibits a maximum on-resistance of 28 mΩ at room temperature. Gate-source voltage limits are specified at ±20 V, with a typical threshold voltage of 2.6 V. Total gate charge is 7.2 nC. The component operates within a temperature range of -55 °C to +150 °C junction temperature. Power dissipation is rated at 2.1 W. Switching characteristics include a rise time of 9 ns and a fall time of 4 ns. It is housed in an SOIC-8 surface-mount package.
Feature Summary
- Dual configuration integrates two independent N-channel transistors within a single compact package for space-constrained designs.
- NexFET technology provides low on-resistance and optimized switching performance for efficient power management.
- Enhanced thermal stability supports operation across a wide industrial temperature range up to 150 °C.
Applications
- DC-DC converter circuits requiring high efficiency and compact form factors
- Low-voltage load switch applications for power distribution networks
- Synchronous rectification stages in point-of-load regulators
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official datasheet to confirm package type and tape-and-reel specifications. Ensure the component meets RoHS compliance requirements for the target market. Cross-reference the part number with authorized distributors to confirm authenticity and traceability before procurement.
Selection Notes
Select this component when a dual N-channel configuration is required within an SOIC-8 footprint. Evaluate the 28 mΩ on-resistance against thermal constraints given the 2.1 W power dissipation rating. Confirm that the 60 V voltage rating exceeds the maximum circuit operating voltage with adequate margin.
Part Context
This device belongs to the CSD88539ND series of dual NexFET power MOSFETs from Texas Instruments. It shares architectural similarities with other devices in the CSD8853x family, offering integrated dual-channel solutions for power management applications requiring reduced board space and simplified layout.
Replacement Considerations
The CSD88537ND is a documented similar dual 60 V N-channel NexFET MOSFET from the same manufacturer. Verify pin compatibility and electrical parameters such as on-resistance and gate charge before substitution.
