CSD88539NDT

Overview

The CSD88539NDT is a dual N-channel NexFET power MOSFET manufactured by Texas Instruments. It features a SOIC-8 surface-mount package with a drain-source breakdown voltage (Vds) of 60 V and a continuous drain current (Id) of 11.7 A at 25°C. The device exhibits a maximum on-resistance (Rds(on)) of 28 mΩ at Vgs = 10 V. Gate characteristics include a threshold voltage (Vgs(th)) of 2.6 V, gate charge (Qg) of 7.2 nC, and switching times of 4 ns fall and 9 ns rise. Power dissipation is rated at 2.1 W, with an operating temperature range from -55°C to +150°C junction temperature.

Feature Summary

• Dual N-channel configuration in a compact SOIC-8 package for space-constrained designs
• Low on-resistance technology optimized for efficient power conversion
• Fast switching capabilities with low gate charge for reduced dynamic losses
• Extended thermal performance supporting high junction temperatures up to 150°C

Applications

• DC-DC converter modules requiring dual synchronous rectification
• Point-of-load (POL) power stages for computing and industrial equipment
• Battery protection circuits and load switches in portable devices

Procurement Notes

Verify the specific ordering suffix against the manufacturer's latest datasheet to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status and moisture sensitivity level requirements prior to procurement. Cross-reference the full part number with authorized distributors to validate current production status and availability constraints.

Selection Notes

Select this component when a dual N-channel MOSFET solution is required in an SOIC-8 footprint. Ensure the application voltage does not exceed the 60 V rating and that the thermal design accommodates the 2.1 W power dissipation limit. Verify that the gate drive voltage supports the specified Rds(on) performance metrics for optimal efficiency.

Part Context

This part belongs to the CSD88539ND series of NexFET power MOSFETs. It serves as a dual-channel variant designed to replace discrete single-transistor solutions, reducing board space and parasitic inductance. The series is engineered for high-density power management applications where size and efficiency are critical constraints.

Replacement Considerations

Direct replacements within the same family include the CSD88537ND. Verify pin compatibility and electrical parameters before substitution. Other 60V dual N-channel SOIC-8 MOSFETs may require schematic review due to potential differences in gate charge or thermal resistance.