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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 22VSON-CLIP
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Half Bridge)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：2.1mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：27nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：4840pF @ 30V
- Power - Max：12W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：22-PowerTFDFN
- Supplier Device Package：22-VSON-CLIP (5x6)
- Grade：-
- Qualification：-
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Overview
The CSD88599Q5DC is a dual N-channel NexFET power MOSFET array manufactured by Texas Instruments. It features a Vds rating of 60 V and supports a continuous drain current (Id) of 40 A. The device exhibits a maximum on-resistance (Rds On) of 1.7 mOhms at Vgs = 10 V. Gate charge (Qg) is specified at 43 nC with a threshold voltage (Vgs th) of 1.4 V. Operating temperatures range from -55°C to +150°C junction temperature, with a maximum power dissipation of 12 W. The component utilizes a 22-VSON-CLIP package.
Feature Summary
- Dual N-channel configuration designed for synchronous buck applications
- NexFET technology optimized for low conduction losses
- Surface-mount construction in a compact thermal clip package
Applications
- Synchronous buck converter circuits
- Point-of-load power management modules
- General-purpose DC-DC conversion stages
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official datasheet to confirm pinout compatibility and electrical tolerances. Ensure that the procurement channel provides traceable documentation matching the original Texas Instruments manufacturing records. Cross-reference the component marking with the approved bill of materials to prevent counterfeit substitution during assembly.
Selection Notes
Select this component when a dual N-channel topology is required within a 60 V system architecture. The 1.7 mOhm Rds On value suits moderate current loads around 40 A where thermal efficiency is critical. Evaluate the 22-VSON-CLIP footprint against available PCB real estate and thermal pad requirements for adequate heat dissipation under continuous operation conditions.
Part Context
This part belongs to the CSD88599 series of NexFET power MOSFETs. It serves as a discrete solution for high-efficiency power switching applications. The dual configuration allows for half-bridge or synchronous rectifier implementations without requiring separate gate drive components for each channel.
Replacement Considerations
Consult the Texas Instruments product selection guide for direct equivalents within the CSD88xx series. Verify pin-to-pin compatibility and thermal resistance characteristics before substituting with other manufacturers' dual N-channel MOSFET arrays.
