CTLDM303N-M832DS BK

CTLDM303N-M832DS BK

  • Description:MOSFET 2N-CH 30V 3.6A TLM832DS
  • Series:-

SKU:c8eeb27e04c0 Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:MOSFET 2N-CH 30V 3.6A TLM832DS
  • Series:-
  • Mfr:Central Semiconductor Corp
  • Package:Bulk
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:3.6A (Ta)
  • Rds On (Max) @ Id, Vgs:40mOhm @ 1.8A, 4.5V
  • Vgs(th) (Max) @ Id:1.25V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:13nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:590pF @ 10V
  • Power - Max:1.65W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-TDFN Exposed Pad
  • Supplier Device Package:TLM832DS
  • Grade:-
  • Qualification:-

Download product information

CTLDM303N-M832DS BK

Overview

The CTLDM303N-M832DS BK is a dual N-channel enhancement-mode silicon MOSFET in the TLM832DS surface-mount package. It features a drain-source voltage of 30 V and a continuous drain current of 3.6 A. The device exhibits a maximum on-resistance of 0.078 Ω at VGS=2.5V and 0.04 Ω at VGS=4.5V. Total gate charge is typically 13 nC, with turn-on and turn-off times of 15 ns and 29 ns respectively. Power dissipation is rated at 1.65 W, with an operating junction temperature range from -55°C to +150°C.

Feature Summary

  • Dual N-channel configuration for high-speed pulsed amplifier and driver applications
  • Low on-resistance optimized for energy efficiency
  • Low gate charge characteristics

Applications

  • DC-DC converters
  • Drive circuits
  • Power management

Procurement Notes

This component has been officially discontinued by Central Semiconductor Corp. as indicated in Product Discontinuation Notice PDN01077 dated April 5, 2018. No replacement part number is provided in the official documentation. Verification of availability should be limited to existing inventory checks, as new orders are not accepted.

Selection Notes

Designers must account for the End of Life status when selecting this component. Since no direct replacement is listed by the manufacturer, alternative sourcing requires identifying functionally equivalent dual N-channel MOSFETs with comparable voltage, current, and thermal specifications through independent technical evaluation.

Part Context

The CTLDM303N-M832DS belongs to the CMxxDM series of dual MOSFETs manufactured by Central Semiconductor. It utilizes the TLM832DS case outline and carries the marking code C330. The product line focuses on surface-mount solutions for power management and switching applications.

Replacement Considerations

No replacement part numbers are documented in the official discontinuation notice (PDN01077). Engineers must source substitutes independently based on electrical parameters.

FAQ

What is the maximum on-resistance at VGS=2.5V?

The maximum rDS(ON) is 0.078 Ω when tested at VGS=2.5V and ID=1.8A.

Is there an official replacement for this part?

No, the manufacturer's discontinuation notice lists no replacement part number for the CTLDM303N-M832DS.

What is the total gate charge specification?

The typical total gate charge (Qg) is 13 nC under conditions of VDD=10V, VGS=4.5V, and ID=3.6A.

CTLDM303N-M832DS BKCTLDM303N-M832DS BK

Click on the inquiry