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The CTLDM303N-M832DS BK is a dual N-channel enhancement-mode silicon MOSFET in the TLM832DS surface-mount package. It features a drain-source voltage of 30 V and a continuous drain current of 3.6 A. The device exhibits a maximum on-resistance of 0.078 Ω at VGS=2.5V and 0.04 Ω at VGS=4.5V. Total gate charge is typically 13 nC, with turn-on and turn-off times of 15 ns and 29 ns respectively. Power dissipation is rated at 1.65 W, with an operating junction temperature range from -55°C to +150°C.
This component has been officially discontinued by Central Semiconductor Corp. as indicated in Product Discontinuation Notice PDN01077 dated April 5, 2018. No replacement part number is provided in the official documentation. Verification of availability should be limited to existing inventory checks, as new orders are not accepted.
Designers must account for the End of Life status when selecting this component. Since no direct replacement is listed by the manufacturer, alternative sourcing requires identifying functionally equivalent dual N-channel MOSFETs with comparable voltage, current, and thermal specifications through independent technical evaluation.
The CTLDM303N-M832DS belongs to the CMxxDM series of dual MOSFETs manufactured by Central Semiconductor. It utilizes the TLM832DS case outline and carries the marking code C330. The product line focuses on surface-mount solutions for power management and switching applications.
No replacement part numbers are documented in the official discontinuation notice (PDN01077). Engineers must source substitutes independently based on electrical parameters.
The maximum rDS(ON) is 0.078 Ω when tested at VGS=2.5V and ID=1.8A.
No, the manufacturer's discontinuation notice lists no replacement part number for the CTLDM303N-M832DS.
The typical total gate charge (Qg) is 13 nC under conditions of VDD=10V, VGS=4.5V, and ID=3.6A.