CTLDM304P-M832DS TR

Description：MOSFET 2P-CH 30V 4.2A TLM832DS
Series：-

SKU:51df32572970 Category: FET, MOSFET Arrays Brand: Central Semiconductor Corp

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Product introduction

Product Detailed Parameters

Description：MOSFET 2P-CH 30V 4.2A TLM832DS
Series：-
Mfr：Central Semiconductor Corp
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 P-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：4.2A
Rds On (Max) @ Id, Vgs：70mOhm @ 4.2A, 10V
Vgs(th) (Max) @ Id：1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：6.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：760pF @ 15V
Power - Max：1.65W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-TDFN Exposed Pad
Supplier Device Package：TLM832DS
Grade：-
Qualification：-

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CTLDM304P-M832DS TR

Overview

The CTLDM304P-M832DS is a surface-mount dual P-channel enhancement-mode silicon MOSFET in the TLM832DS package. It features a Drain-Source Voltage (VDS) of 30 V and a continuous drain current (ID) of 4.2 A. The device offers low on-resistance, with rDS(ON) values of 70 mΩ at VGS=10V/ID=4.2A, 75 mΩ at VGS=4.5V/ID=4.0A, and 120 mΩ at VGS=2.5V/ID=1.0A. Gate charge (Qg) is typically 6.4 nC. Maximum ratings include a gate-source voltage of 12 V, pulsed drain current of 30 A, power dissipation of 1.65 W, and an operating junction temperature range of -55 to +150 °C.

Feature Summary

Dual P-channel configuration for high-speed pulsed amplifier and driver applications
Low on-resistance (rDS(ON)) for energy-efficient operation
Low gate charge and threshold voltage

Applications

Switching circuits
DC-DC converters
Power management

Procurement Notes

This component has been officially discontinued by Central Semiconductor Corp. and is classified as End of Life (EOL). No replacement part numbers are available from the manufacturer. Procurement should focus on verifying existing inventory availability or sourcing alternative components through third-party distributors. Contact [email protected] for technical data regarding alternate sources.

Selection Notes

Select this component only if legacy compatibility is required, as it is no longer in production. Verify that the 30 V rating and 4.2 A continuous current meet circuit requirements. Ensure the TLM832DS package footprint matches the PCB layout. Consider thermal resistance limits of 76 °C/W during design validation.

Part Context

The CTLDM304P-M832DS belongs to Central Semiconductor's line of dual P-channel MOSFETs designed for surface mount technology. It utilizes the TLM832DS case outline and carries the marking code C430. This series targets applications requiring compact packaging with efficient switching performance.

Replacement Considerations

No official replacement part numbers are provided by Central Semiconductor Corp. for this discontinued product. Designers must identify equivalent dual P-channel MOSFETs with matching voltage, current, and package specifications from other manufacturers.