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Product Detailed Parameters
- Description：MOSFET P-CH 20V 140MA TLM3D6D8
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：140mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.2V, 4.5V
- Rds On (Max) @ Id, Vgs：5Ohm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.5 nC @ 4.5 V
- Vgs (Max)：8V
- Input Capacitance (Ciss) (Max) @ Vds：10 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：125mW (Ta)
- Operating Temperature：-65°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TLM3D6D8
- Package / Case：3-XFDFN
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Overview
The CTLDM7590 is a surface-mount P-channel enhancement-mode silicon MOSFET designed for high-speed pulsed amplifiers and drivers. It features low on-resistance, low threshold voltage, and minimal gate charge within an ultra-small TLM leadless package measuring 0.6mm x 0.8mm x 0.4mm. Key electrical ratings include a drain-source voltage of 20V, continuous drain current of 140mA, and power dissipation of 125mW at 25°C. The device operates across a junction temperature range of -65°C to +150°C.
Feature Summary
- ESD protection capability up to 2kV
- Ultra-small, ultra-low profile leadless surface mount package
- Beneficially low on-resistance and low threshold voltage characteristics
Applications
- Load and power switches
- Boost and buck converters
- Battery charging and power management systems
Procurement Notes
Verify the specific ordering suffix required for plating options, such as PBFREE or TIN/LEAD, when placing orders. Confirm availability status as the product family has been transitioned to End of Life. Contact Central Semiconductor engineering directly for technical data or alternate source assistance if standard procurement channels are insufficient.
Selection Notes
Select this component for designs requiring compact footprint and fast switching speeds in pulsed amplifier applications. Evaluate thermal resistance constraints due to the small package size and limited power dissipation rating. Ensure gate drive voltages align with the specified threshold and on-resistance test conditions for optimal performance.
Part Context
This part belongs to Central Semiconductor's discrete semiconductor lineup, specifically categorized under surface-mount P-channel MOSFETs. It utilizes the TLM3D6D8 case configuration, which defines its physical dimensions and pinout arrangement for PCB integration.
Replacement Considerations
No replacement part numbers are currently available from the manufacturer. The product line is classified as End of Life, and customers are advised to contact [email protected] for potential alternate sourcing guidance.
