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Product Detailed Parameters
- Description：MOSFET N-CH 30V 5.8A 8SOIC
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：5.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：30mOhm @ 2.9A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：6.3 nC @ 5 V
- Vgs (Max)：20V
- Input Capacitance (Ciss) (Max) @ Vds：560 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-SOIC
- Package / Case：8-SOIC (0.154", 3.90mm Width)
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Overview
The CWDM305N TR13 PBFREE is a surface-mount silicon N-channel enhancement-mode MOSFET designed for high-speed pulsed amplifier and driver applications. It features a SOIC-8 package with a maximum drain-source voltage of 30 V and a continuous drain current of 5.8 A. The device offers a low on-resistance of 30 mΩ at VGS=10V and a total gate charge of 6.3 nC. Operating junction temperatures range from -55°C to +150°C, with a power dissipation rating of 2.0 W.
Feature Summary
- Low on-resistance for energy efficiency
- High current capability
- Low gate charge
Applications
- Load switches
- Power switches
- DC-DC converter circuits
- Power management
Procurement Notes
Verify the specific ordering suffix required for plating options. The standard configuration uses lead-free plating indicated by the PBFREE suffix. Tin/lead plating requires adding the TIN/LEAD suffix to the part number when placing orders. Confirm package type and thermal resistance specifications match design requirements before procurement.
Selection Notes
Select this component for designs requiring high-speed switching with low drive power. The low threshold voltage facilitates easy logic interfacing. Ensure the application stays within the 2.0 W power dissipation limit or provides adequate heatsinking. Verify that the 30 V drain-source voltage exceeds the maximum circuit voltage under all operating conditions.
Part Context
This component belongs to the Central Semiconductor CWDM series of surface-mount N-channel MOSFETs. These devices are engineered for high-current applications where low on-resistance and fast switching speeds are critical. The SOIC-8 package allows for compact PCB layouts in modern electronic designs.
Replacement Considerations
Consult official datasheets for pin-compatible alternatives within the same manufacturer's portfolio. Verify that any substitute matches the 30 V rating, 5.8 A current capacity, and SOIC-8 package dimensions.
