CWDM305PD TR13 PBFREE

$0.26

Description：MOSFET 2P-CH 30V 5.3A 8SOIC
Series：-

SKU:84d9afdcea05 Category: FET, MOSFET Arrays Brand: Central Semiconductor Corp

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Product introduction

Product Detailed Parameters

Description：MOSFET 2P-CH 30V 5.3A 8SOIC
Series：-
Mfr：Central Semiconductor Corp
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 P-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：5.3A
Rds On (Max) @ Id, Vgs：72mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds：590pF @ 10V
Power - Max：2W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOIC
Grade：-
Qualification：-

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CWDM305PD TR13 PBFREE

Overview

The CWDM305PD is a surface-mount silicon dual P-channel enhancement-mode MOSFET manufactured using a P-channel DMOS process. Designed for high-speed pulsed amplifier and driver applications, it features low on-resistance and low gate charge. The device operates with a drain-source voltage of 30 V and a continuous drain current of 5.3 A. Maximum power dissipation is 2.0 W at 25°C ambient temperature. It utilizes an SOIC-8 package (Case R3) and supports junction temperatures from -55°C to +150°C.

Feature Summary

Dual high-current P-channel configuration optimized for high-speed pulsed amplifier and driver applications
Low rDS(ON) characteristics ensuring efficient power handling
Low threshold voltage and low gate charge for improved switching performance

Applications

Load and power switches
Power supply converter circuits
Battery-powered portable equipment

Procurement Notes

Verify the specific ordering suffix when placing orders. The suffix PBFREE indicates lead-free plating, while TIN/LEAD indicates tin/lead plating options. Confirm package type and marking codes match design requirements before procurement.

Selection Notes

Select this component for designs requiring a dual P-channel MOSFET in an SOIC-8 package. Ensure the application stays within the 30 V drain-source voltage limit and 5.3 A continuous current rating. Consider thermal resistance of 62.5 °C/W for heat dissipation planning.

Part Context

This part belongs to Central Semiconductor's line of surface-mount silicon MOSFETs. It is specifically engineered for high-speed switching applications where low on-resistance and fast response times are critical. The dual configuration allows for compact circuit designs in power management systems.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation. Verify pinout compatibility and electrical parameters if considering alternative manufacturers.