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Product Detailed Parameters
- Description：MOSFET N-CH 30V 6.9A SOT-89
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：6.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
- Rds On (Max) @ Id, Vgs：30mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id：1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：11 nC @ 10 V
- Vgs (Max)：12V
- Input Capacitance (Ciss) (Max) @ Vds：580 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：1.2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-89
- Package / Case：TO-243AA
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Overview
The CXDM3069N TR PBFREE is a surface-mount N-channel enhancement-mode silicon MOSFET manufactured by Central Semiconductor Corp. It operates within a drain-source voltage range of 30 V and provides a continuous drain current of 6.9 A, with a maximum pulsed current capability of 40 A. The device features a low on-resistance of 50 mΩ maximum at VGS=2.5V and a gate-source voltage rating of 12 V. Power dissipation is rated at 1.2 W, supported by a thermal resistance (ΘJA) of 104 °C/W. It functions reliably across an operating junction temperature range of -55 to +150 °C.
Feature Summary
- High current handling capability suitable for demanding power applications
- Low on-resistance optimized for efficient switching performance
- Logic level compatibility enabling direct drive from standard logic circuits
Applications
- Load and power switches
- Power supply converter circuits
- Battery powered portable equipment
Procurement Notes
Verify the specific ordering suffix required for your manufacturing needs. The PBFREE designation indicates lead-free plating compliance. Confirm that the SOT-89 package dimensions align with your PCB footprint requirements. Ensure thermal management strategies account for the specified thermal resistance values during operation.
Selection Notes
Select this component when high-speed pulsed amplifier or driver applications require robust current handling in a compact surface-mount form factor. Evaluate the threshold voltage characteristics against your control logic levels. Consider the thermal constraints imposed by the 1.2 W power dissipation rating in your final enclosure design.
Part Context
This part belongs to the CXDM series of surface-mount N-channel enhancement-mode silicon MOSFETs from Central Semiconductor Corp. These devices are engineered specifically for high-current applications where space efficiency and switching speed are critical design parameters.
Replacement Considerations
The manufacturer has designated the CXDM3069N as End of Life (EOL). No official replacement part numbers are currently provided by Central Semiconductor Corp for this specific model.
