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Product Detailed Parameters
- Description：MOSFET N-CH 60V 5.3A SOT-89
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：5.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：41mOhm @ 5.3A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：8.8 nC @ 5 V
- Vgs (Max)：20V
- Input Capacitance (Ciss) (Max) @ Vds：920 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：1.2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-89
- Package / Case：TO-243AA
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Overview
The CXDM6053N TR PBFREE is a surface-mount N-channel enhancement-mode silicon MOSFET in an SOT-89 package. It provides a drain-source voltage of 60V, continuous drain current of 5.3A, and maximum pulsed drain current of 30A. Power dissipation is rated at 1.2W with a thermal resistance of 104°C/W. The device operates within a junction temperature range of -55 to +150°C.
Feature Summary
- Designed for high-speed pulsed amplifier and driver applications
- Features low on-resistance and logic level compatibility
- Offers high current capability with low threshold voltage
Applications
- Load and power switches
- Power supply converter circuits
- Battery-powered portable equipment
Procurement Notes
This component is classified as End of Life (EOL). Orders may be accepted only from available inventory or through Last Time Buy provisions. Final shipments are scheduled twelve months from the notice date. Minimum order quantities may apply. Verify availability directly with Central Semiconductor Customer Service before placing orders.
Selection Notes
Select this part for high-current switching tasks requiring low on-resistance. Ensure designs accommodate the 1.2W power dissipation limit and 104°C/W thermal resistance. Verify that the 60V rating meets circuit requirements. Note that the SOT-89 package is discontinued; evaluate alternative packages if long-term production is required.
Part Context
The CXDM6053N belongs to Central Semiconductor's surface-mount MOSFET portfolio. It is specifically engineered for high-speed pulsed applications. The device utilizes silicon technology and features an N-channel enhancement mode configuration. It is housed in an SOT-89 case with specific pin assignments for gate, drain, and source connections.
Replacement Considerations
No suggested replacement part numbers are provided by the manufacturer for this component. Customers are advised to contact Central Semiconductor Customer Service for assistance in locating alternate sources or technical data for suitable substitutes.
