CY7C1565KV18-450BZXI

Memory IC Overview

The CY7C1565KV18 is a 72-Mbit QDR II+ synchronous SRAM organized as 2M x 36. It features a maximum operating frequency of 450 MHz and supports concurrent read and write transactions via separate independent ports. The device utilizes a four-word burst architecture with 2.5-cycle read latency when the DOFF pin is asserted HIGH. It operates on a 1.8 V core supply (± 0.1 V) and accepts I/O voltages between 1.4 V and 1.9 V. The component is housed in a 165-ball FBGA package measuring 13 × 15 mm.

Memory IC Feature Summary

• Supports concurrent read and write operations through dedicated data ports, eliminating bus turnaround requirements.
• Features a four-word burst architecture that reduces address bus frequency while maximizing data throughput.
• Includes echo clocks (CQ/CQ) and a valid data indicator (QVLD) to simplify high-speed system timing.
• Provides byte-level write control via BWS inputs for efficient read-modify-write operations.

Memory IC Applications

• High-bandwidth networking equipment requiring low-latency packet buffering
• Telecommunications infrastructure utilizing QDR interface standards
• Industrial systems demanding full data coherency during concurrent access

Memory IC Procurement Notes

Verify the specific speed grade suffix matches the required clock frequency, as the base part number covers multiple variants up to 550 MHz. Confirm the package marking code corresponds to the 165-ball FBGA configuration. Ensure the ordering suffix aligns with the desired temperature range and RoHS compliance status before finalizing procurement orders.

Memory IC Selection Notes

Select this component when system design requires simultaneous independent read and write access without data contention. The 2.5-cycle latency mode is optimal for high-throughput applications, while disabling the PLL allows compatibility with legacy QDR I timing constraints. Verify that the host controller supports the required DDR interface signaling and echo clock synchronization.

Memory IC Part Context

This device belongs to the Cypress/Infineon QDR II+ SRAM family, which extends the original QDR architecture by adding programmable impedance and enhanced timing features. It shares the same physical footprint and basic pinout structure as other members in the 72-Mbit density class, facilitating direct board-level upgrades within compatible memory subsystems.

Memory IC Replacement Considerations

Direct substitutes include CY7C1565KV18-400BZXI and CY7C1565KV18-550BZXI, which share identical pinouts and functionality but differ in maximum clock frequency specifications.

Memory IC FAQ

How does the DOFF pin affect the read latency?

Asserting DOFF HIGH enables the standard 2.5-cycle read latency. Connecting DOFF LOW disables the internal PLL, causing the device to operate in QDR I mode with one-cycle read latency.

What is the function of the ZQ pin?

The ZQ pin is used for output impedance matching. An external resistor connected between ZQ and ground tunes the output drivers to match the system data bus impedance.