DC35GN-15-D3

Overview

The DC35GN-15-D3 is a GaN on SiC HEMT transistor designed for broadband RF applications. It delivers 15 Watts of output power with over 18 dB gain across the 30 to 3500 MHz frequency range. The device operates at a maximum drain-source voltage of 65 V and features a 3x6mm Plastic DFN SMT package. Key electrical characteristics include a typical drain efficiency of 65% and a load mismatch tolerance of 10:1 at 1215 MHz.

Feature Summary

• Utilizes Gallium Nitride on Silicon Carbide (GaN on SiC) technology for high-power density.
• Provides consistent performance across a wide 30-3500 MHz bandwidth.
• Engineered for both narrowband and broadband pulsed or continuous wave operations.

Applications

• Avionics communication systems
• Broadband RF amplification
• Pulsed radar transmitters

Procurement Notes

Verify the manufacturer designation, as datasheets reference Microsemi while the brand input specifies Microchip Technology. Confirm the specific package variant matches the 3x6mm Plastic DFN requirement. Ensure all handling procedures strictly follow Electrostatic Discharge (ESD) Class 1B protocols due to the sensitivity of the GaN semiconductor structure.

Selection Notes

Select this component when designing circuits requiring high linearity and power efficiency in a compact form factor. The device supports flexible biasing configurations for various voltage levels. Evaluate thermal management requirements carefully, as the exposed paddle must be mounted to a heat sink to maintain optimal junction temperatures during operation.

Part Context

This part belongs to the DC35GN series of broadband transistors. It represents a solution for mid-power RF stages where size constraints are critical. The family utilizes advanced semiconductor materials to achieve superior gain and efficiency compared to traditional silicon-based alternatives.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

FAQ

What is the correct bias sequencing for turning the device ON?

First set VGS to pinch-off (typically -5 V), then turn on VDS to 50 V, increase VGS to reach the desired IDS current, and finally apply RF power.

How should the device be handled regarding static electricity?

The device is an ESD Class 1B component. Proper electrostatic discharge control techniques must be used during handling to prevent damage.

What is the maximum operating junction temperature?

The maximum operating junction temperature is +200 °C.