DC35GN-15-Q4

Overview

The DC35GN-15-Q4 is a GaN-on-SiC wideband transistor designed for broadband pulsed and continuous wave (CW) RF power applications. It operates with a 50V bias and delivers up to 15W of saturated output power across the DC to 3.5 GHz frequency range. The device utilizes a QFN 4x4 mm package featuring gold metallization and an air-cavity copper base, providing high thermal conductivity and superior electrical performance. Key specifications include a drain-source breakdown voltage of 125V, a maximum operating junction temperature of +200°C, and a typical power gain of 18 dB at 1.4 GHz.

Feature Summary

• Utilizes GaN-on-SiC HEMT technology for high-power density and ruggedness
• Features a QFN 4x4 mm package with gold metallization and air-cavity Cu-base for enhanced thermal management
• Supports both pulsed and CW operation across a wide bandwidth from DC to 3.5 GHz
• Designed for general-purpose driver applications requiring high breakdown voltage

Applications

• Pulsed Radar systems
• Avionics equipment
• ISM band applications
• CW Communication transmitters

Procurement Notes

Verify the specific revision status of the datasheet before finalizing designs, as Microsemi reserves the right to change configurations without notice. Confirm that the application environment does not involve life-support or mission-critical equipment, as the product has been subject to limited testing in these areas. Ensure proper thermal interface materials are selected to utilize the exposed pad effectively.

Selection Notes

Select this component when designing RF front-ends requiring a balance of moderate power output and wide bandwidth. The 50V bias requirement dictates the power supply architecture. Consider the QFN package's thermal resistance characteristics and ensure the PCB layout includes solid copper-filled vias under the exposed pad to maintain optimal heat dissipation and RF performance.

Part Context

This device belongs to the family of GaN-on-SiC wideband transistors manufactured by Microsemi. It is specifically engineered to replace traditional LDMOS or GaAs devices in S-band and C-band applications where higher efficiency and smaller form factors are required. The QFN packaging allows for surface-mount integration into compact microwave circuits.

Replacement Considerations

No direct public substitute part numbers are documented in the provided datasheet. Designers should consult Microsemi's official resources for comparable parts or perform a full schematic and layout redesign if transitioning from other manufacturers' devices due to differing pinouts and bias requirements.