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Product Detailed Parameters
- Description：MOSFET 2N-CH 1200V AG-EASY1BM-2
- Series：CoolSiC™+
- Mfr：Infineon Technologies
- Package：Tray
- Technology：Silicon Carbide (SiC)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C：50A (Tj)
- Rds On (Max) @ Id, Vgs：22.5mOhm @ 50A, 15V
- Vgs(th) (Max) @ Id：5.55V @ 20mA
- Gate Charge (Qg) (Max) @ Vgs：124nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds：3680pF @ 800V
- Power - Max：-
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：AG-EASY1BM-2
- Grade：-
- Qualification：-
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Overview
The DF11MR12W1M1B11BPSA1 is a CoolSiC MOSFET booster module from Infineon Technologies, rated at 1200 V. It utilizes silicon carbide technology and belongs to the M1H series within the EasyPACK package family. The component features a half-bridge configuration designed for high-efficiency power conversion applications.
Feature Summary
- Utilizes silicon carbide (SiC) semiconductor technology for enhanced thermal performance and switching efficiency.
- Integrated into the EasyPACK packaging platform to facilitate standardized mounting and integration.
- Configured as a booster module suitable for active front-end and boost converter topologies.
Applications
- Active Front End (AFE) drives
- Boost converters in renewable energy systems
- High-efficiency industrial power supplies
Procurement Notes
Verify the specific suffix BPSA1 against official Infineon documentation to confirm tape-and-reel packaging specifications. Confirm current lifecycle status and availability through authorized distributors, as supply conditions may vary by region.
Selection Notes
Select this module for designs requiring low switching losses and high-temperature operation. Ensure gate drive compatibility with CoolSiC characteristics. Verify thermal management solutions align with the EasyPACK form factor and power dissipation requirements of the target application.
Part Context
This component is part of Infineon's CoolSiC portfolio, leveraging silicon carbide material properties. It falls under the EasyPACK series, which standardizes mechanical dimensions for modular power electronics. The M1H series designation indicates specific internal cell architecture optimizations.
Replacement Considerations
Consult official substitution guides for compatible SiC booster modules within the EasyPACK family. Verify pinout compatibility and electrical ratings before replacing existing components in established designs.
