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Product Detailed Parameters
- Description：MOSFET 1200V AG-EASY1B
- Series：CoolSiC™
- Mfr：Infineon Technologies
- Package：Tray
- Technology：Silicon Carbide (SiC)
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：AG-EASY1B
- Grade：-
- Qualification：-
Download product information
Overview
The DF11MR12W1M1HFB67BPSA1 is a CoolSiC™ Trench MOSFET booster module in the EasyPACK™ package. It features a 1200 V drain-source voltage and a continuous DC drain current of 25 A at 175 °C, with a repetitive peak current of 50 A. The module integrates an NTC temperature sensor and utilizes PressFIT contact technology for mounting. Electrical characteristics include a maximum on-resistance of 69.4 mΩ at 175 °C and a gate threshold voltage ranging from 3.45 V to 5.15 V.
Feature Summary
- Integrates CoolSiC™ Trench MOSFET technology for high efficiency
- Includes an integrated NTC temperature sensor for thermal monitoring
- Utilizes PressFIT contact technology for robust mechanical connection
- Features low inductive design to minimize switching losses
Applications
- Solar applications
Procurement Notes
Verify the component against the official Infineon datasheet IFX-ABD310-001 (Revision 0.10). Confirm that the specific ordering suffix matches the required electrical and mechanical specifications. Ensure compliance with industrial qualification standards IEC 60747, 60749, and 60068 before integration into final designs.
Selection Notes
Select this module for applications requiring high current density and rugged mounting solutions. Consider the thermal resistance values and operating temperature limits when designing the heat sink interface. Verify that the system voltage does not exceed the 1200 V rating and that the gate drive voltages remain within the specified static and transient limits.
Part Context
This component belongs to the M1H series of discrete semiconductor modules manufactured by Infineon Technologies. It is part of the EasyPACK™ family designed for power electronics applications. The module combines silicon carbide MOSFETs with auxiliary diodes and protection circuits in a single compact housing.
Replacement Considerations
Consult official Infineon documentation for qualified substitute part numbers. Cross-referencing should be performed based on matching electrical ratings, package dimensions, and thermal characteristics to ensure functional compatibility.
