ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 1200V AG-EASY1B
- Series：CoolSiC™
- Mfr：Infineon Technologies
- Package：Tray
- Technology：Silicon Carbide (SiC)
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：AG-EASY1B
- Grade：-
- Qualification：-
Download product information
Overview
The DF14MR12W1M1HFB67BPSA1 is a CoolSiC™ Trench MOSFET booster module in an EasyPACK™ package. It features a 1200 V drain-source voltage and a continuous DC drain current of 30 A at 175 °C, with a repetitive peak current of 60 A. The module integrates a boost diode rated for 40 A continuous forward current and includes bypass and inverse-polarity protection diodes. Electrical characteristics include a maximum on-resistance of 56.8 mΩ at 175 °C and a gate threshold voltage ranging from 3.45 V to 5.15 V. Thermal management is supported by a junction-to-heat sink resistance of 1.25 K/W per MOSFET.
Feature Summary
- Integrated NTC temperature sensor for thermal monitoring
- PressFIT contact technology for secure mounting
- Rugged design with integrated mounting clamps
- Low inductive design for high-performance switching
Applications
- Solar applications
Procurement Notes
Verify the component against the official Infineon datasheet IFX-ABF579-001 (Revision 0.10). Confirm that the ordering suffix B67 corresponds to the specified EasyPACK™ mechanical dimensions and terminal configuration. Ensure compatibility with industrial application standards as defined in IEC 60747, 60749, and 60068 before finalizing procurement specifications.
Selection Notes
Select this module for designs requiring high power density and efficient thermal dissipation in solar systems. The 1200 V rating supports standard grid-tied inverter topologies. Evaluate the 30 A continuous current capability against the specific load requirements at elevated operating temperatures up to 175 °C. Consider the low stray inductance of 10 nH for minimizing switching losses and electromagnetic interference in high-frequency operation.
Part Context
This component belongs to the Infineon CoolSiC™ M1H series, utilizing silicon carbide semiconductor technology. It is housed in the industry-standard EasyPACK™ form factor, designed for robust integration into power electronics. The module combines high-voltage MOSFETs with complementary diodes to facilitate efficient power conversion in demanding industrial environments.
Replacement Considerations
Consult the official Infineon product selection guide for verified substitutes within the CoolSiC™ M1H family. Cross-reference electrical ratings and mechanical dimensions to ensure functional equivalence without modifying the host system layout or thermal interface.
FAQ
What is the maximum operating junction temperature for the MOSFET?
The maximum operating junction temperature for the MOSFET is 175 °C.
Does the module include an integrated temperature sensor?
Yes, the module includes an integrated NTC thermistor with a rated resistance of 5 kΩ at 25 °C.
What is the typical turn-on energy loss at 25 °C?
The typical turn-on energy loss is 0.266 mJ per pulse under standard test conditions (ID = 30 A, VDD = 600 V).
