DF150R12RT4HOSA1

$76.57

Description：IGBT MOD 1200V 150A 790W
Series：-

SKU:e9d4f45ce9d0 Category: IGBT Modules Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT MOD 1200V 150A 790W
Series：-
Mfr：Infineon Technologies
Package：Bulk,Tray
IGBT Type：Trench Field Stop
Configuration：Single Chopper
Vce(on) (Max) @ Vge, Ic：2.15V @ 15V, 150A
Input：Standard
NTC Thermistor：No
Operating Temperature：-40°C ~ 150°C
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：Module
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：150 A
Power - Max：790 W
Current - Collector Cutoff (Max)：1 mA
Input Capacitance (Cies) @ Vce：9.3 nF @ 25 V

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DF150R12RT4HOSA1

Overview

The DF150R12RT4HOSA1 is a single chopper IGBT module from Infineon Technologies, utilizing Trench/Fieldstop IGBT4 technology. It features a maximum collector-emitter voltage of 1200 V and a continuous collector current of 150 A at 25°C. The typical saturation voltage is 2.15 V at 150 A with a 15 V gate drive. Maximum power dissipation is rated at 790 W, with an operating temperature range spanning from -40°C to +150°C junction temperature. The component is housed in a base-mounted module package.

Feature Summary

Integrates Trench/Fieldstop IGBT4 technology for optimized switching performance
Designed as a single chopper configuration for high-power applications
Utilizes a robust base-mounted module construction

Applications

Industrial motor drives
Uninterruptible power supplies (UPS)
Welding equipment

Procurement Notes

Verify the specific suffix HOSA1 against official datasheets to confirm RoHS compliance status and lead time requirements. Confirm availability as this part number may be discontinued or subject to limited supply constraints depending on the distribution channel.

Selection Notes

Select this module for applications requiring a 1200 V rating and 150 A current capacity in a single-chopper topology. Ensure thermal management solutions support the 790 W power dissipation limit and that gate drive circuits provide the necessary 15 V signal for optimal saturation characteristics.

Part Context

This component belongs to the Infineon IGBT4 series, which combines trench gate technology with field-stop structures. This architecture aims to reduce switching losses while maintaining low conduction voltage drops compared to previous generations.