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The DF160R12W2H3FB11BPSA1 is a booster IGBT module from Infineon Technologies, utilizing High Speed IGBT H3 technology. It features a quad configuration with a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 20 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.55 V and operates within a junction temperature range of -40°C to +150°C. Packaged in the EasyPACK format with press-fit mounting, it includes an integrated NTC thermistor for thermal monitoring.
Verify the specific ordering suffix BPSA1 against official Infineon documentation to confirm exact manufacturing lot details and compliance status. Ensure compatibility with existing PCB layouts designed for EasyPACK modules. Confirm that the press-fit mounting requirements align with the assembly equipment specifications before procurement.
Select this component when a booster configuration is required within a high-speed IGBT application. The 1.2 kV rating suits medium-voltage systems, while the 20 A current capacity defines its power handling limits. Consider the EasyPACK package dimensions and press-fit termination style during mechanical design integration.
This module belongs to the High Speed IGBT H3 series, which represents advanced trench field-stop technology optimized for fast switching operations. The EasyPACK family provides standardized form factors for efficient thermal dissipation and reliable electrical connections in compact power electronic designs.
Cross-reference with other Infineon EasyPACK booster modules sharing the same pinout and thermal characteristics. Verify that any substitute maintains equivalent switching speeds and voltage ratings to ensure system stability without redesigning the gate drive circuitry.