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Product Detailed Parameters
- Description：MOSFET 2N-CH 1200V 25A AG-EASY1B
- Series：EasyPACK™
- Mfr：Infineon Technologies
- Package：Bulk,Tray
- Technology：Silicon Carbide (SiC)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C：25A (Tj)
- Rds On (Max) @ Id, Vgs：45mOhm @ 25A, 15V
- Vgs(th) (Max) @ Id：5.55V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs：62nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds：1840pF @ 800V
- Power - Max：-
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：AG-EASY1B-2
- Grade：-
- Qualification：-
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Overview
The DF23MR12W1M1PB11BPSA1 is a dual N-channel Silicon Carbide (SiC) MOSFET module manufactured by Infineon Technologies. It utilizes the AG-EASY1BM-2 package and employs screw mount installation. The device features a drain-source breakdown voltage of 1.2 kV and supports a continuous drain current of 25 A at 25°C. Its on-state resistance is specified at 66 mOhms, with a gate-source voltage range of +5.55 V. Operating temperatures span from -40°C to +150°C junction temperature.
Feature Summary
- Utilizes Silicon Carbide semiconductor technology for high-performance power switching.
- Incorporates the AG-EASY1BM-2 module form factor designed for robust mechanical mounting.
- Configured as a dual N-channel arrangement within a single compact package.
Applications
- Industrial motor drives
- Uninterruptible power supplies
- Solar inverters
Procurement Notes
Verify the exact suffix against official Infineon documentation, as variations in the final characters often denote specific tape-and-reel packaging or RoHS compliance updates rather than functional changes. Confirm availability status directly with the manufacturer or authorized distributors, as this component may be subject to end-of-life notifications or production discontinuance. Ensure that the ordering part number matches the required package type and terminal configuration for your assembly process.
Selection Notes
Select this module when a dual SiC MOSFET configuration is required with a 1.2 kV rating and moderate current handling capabilities around 25 A. The AG-EASY1BM-2 package is suitable for applications requiring screw-mount thermal management. Compare the 66 mOhm on-resistance against system efficiency targets. Ensure the driving circuitry can support the specified gate voltage thresholds and manage the switching characteristics inherent to Silicon Carbide devices.
Part Context
This component belongs to Infineon's CoolSiC portfolio, specifically leveraging the EasyPACK technology platform. The series integrates advanced Silicon Carbide MOSFETs into standardized modules to simplify system design. These modules are engineered to replace traditional silicon IGBTs in high-frequency applications, offering reduced switching losses and improved thermal performance within a mechanically optimized housing.
Replacement Considerations
Consult official Infineon cross-reference guides for verified substitutes. Potential alternatives include other models within the FF or DF series sharing the AG-EASY1BM-2 package and similar electrical ratings. Verify pinout compatibility and thermal interface requirements before substituting any component.
