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The DF419MR20W3M1HFB11BPSA1 is a CoolSiC Trench MOSFET module in the EasyPACK package. It features a 2000 V drain-source voltage and a continuous DC current of 50 A at 175 °C, with a peak repetitive current of 120 A. The on-state resistance is typically 26.5 mΩ at 25 °C. The module includes an integrated NTC thermistor for temperature monitoring and utilizes PressFIT contact technology.
Verify the exact part number against official Infineon documentation to ensure compatibility with your specific application requirements. Confirm that the datasheet revision matches your design specifications. Check for any updates or notices regarding the product's qualification status before finalizing procurement decisions.
Consider the thermal management requirements given the junction-to-heatsink thermal resistance values. Ensure the gate drive voltages align with the recommended operating conditions. Evaluate the stray inductance characteristics for high-frequency switching applications. Verify the insulation coordination parameters for safety compliance.
This component belongs to the EasyPACK module series from Infineon Technologies, utilizing CoolSiC Trench MOSFET technology. It is designed for industrial applications and qualified according to IEC standards. The module integrates both MOSFETs and booster diodes within a single package.
Consult official Infineon documentation for verified substitute part numbers. Do not assume cross-compatibility with other modules without verifying electrical and mechanical parameters.
The maximum repetitive peak drain current (IDRM) is 120 A.
No, the body diode cannot be used for polarity protection; an external diode is required.
The rated resistance (R25) of the NTC thermistor is 5 kΩ at 25 °C.