DF419MR20W3M1HFB11BPSA1

DF419MR20W3M1HFB11BPSA1

$217.79
  • Description:MOSFET 4N-CH 2000V 50A AG-EASY3B
  • Series:EasyPACK™

SKU:7ea6a8aece95 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:MOSFET 4N-CH 2000V 50A AG-EASY3B
  • Series:EasyPACK™
  • Mfr:Infineon Technologies
  • Package:Tray
  • Technology:MOSFET (Metal Oxide)
  • Configuration:4 N-Channel
  • FET Feature:-
  • Drain to Source Voltage (Vdss):2000V (2kV)
  • Current - Continuous Drain (Id) @ 25°C:50A (Tj)
  • Rds On (Max) @ Id, Vgs:26.5mOhm @ 60A, 18V
  • Vgs(th) (Max) @ Id:5.15V @ 34mA
  • Gate Charge (Qg) (Max) @ Vgs:234nC @ 18V
  • Input Capacitance (Ciss) (Max) @ Vds:7240pF @ 1.2kV
  • Power - Max:-
  • Operating Temperature:-40°C ~ 175°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:AG-EASY3B
  • Grade:-
  • Qualification:-

Download product information

DF419MR20W3M1HFB11BPSA1

Overview

The DF419MR20W3M1HFB11BPSA1 is a CoolSiC Trench MOSFET module in the EasyPACK package. It features a 2000 V drain-source voltage and a continuous DC current of 50 A at 175 °C, with a peak repetitive current of 120 A. The on-state resistance is typically 26.5 mΩ at 25 °C. The module includes an integrated NTC thermistor for temperature monitoring and utilizes PressFIT contact technology.

Feature Summary

  • Integrated NTC temperature sensor
  • PressFIT contact technology
  • Low inductive design

Applications

  • Solar applications

Procurement Notes

Verify the exact part number against official Infineon documentation to ensure compatibility with your specific application requirements. Confirm that the datasheet revision matches your design specifications. Check for any updates or notices regarding the product's qualification status before finalizing procurement decisions.

Selection Notes

Consider the thermal management requirements given the junction-to-heatsink thermal resistance values. Ensure the gate drive voltages align with the recommended operating conditions. Evaluate the stray inductance characteristics for high-frequency switching applications. Verify the insulation coordination parameters for safety compliance.

Part Context

This component belongs to the EasyPACK module series from Infineon Technologies, utilizing CoolSiC Trench MOSFET technology. It is designed for industrial applications and qualified according to IEC standards. The module integrates both MOSFETs and booster diodes within a single package.

Replacement Considerations

Consult official Infineon documentation for verified substitute part numbers. Do not assume cross-compatibility with other modules without verifying electrical and mechanical parameters.

FAQ

What is the maximum repetitive peak drain current?

The maximum repetitive peak drain current (IDRM) is 120 A.

Is the body diode suitable for polarity protection?

No, the body diode cannot be used for polarity protection; an external diode is required.

What is the rated resistance of the integrated NTC thermistor?

The rated resistance (R25) of the NTC thermistor is 5 kΩ at 25 °C.

DF419MR20W3M1HFB11BPSA1DF419MR20W3M1HFB11BPSA1
$217.79
Buy Now