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The DF450R12N2E4PB11BPSA1 is a single IGBT module from Infineon’s Trenchstop IGBT4 - E4 series, utilizing silicon technology. It features a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 450 A at 25°C. The device has a collector-emitter saturation voltage of 2.15 V and a gate-emitter leakage current of 400 nA. Designed for screw mount installation, it operates within a temperature range of -40°C to +150°C. The package dimensions are 106.4 mm x 61.4 mm x 30.5 mm, with a unit weight of approximately 345 g.
Verify the complete ordering part number against official Infineon documentation to ensure correct variant selection. Confirm that the specific suffix matches the required technical specifications and packaging format. Cross-reference the manufacturer datasheet for any recent updates regarding pinout or thermal characteristics before finalizing procurement orders.
Select this component for applications requiring high current handling with a single switch configuration. The 1.2 kV rating suits medium-voltage industrial environments. Ensure the cooling solution supports the thermal requirements for 450 A continuous operation. Verify that the PCB layout accommodates the specific screw mount footprint and terminal spacing defined in the mechanical drawings.
This module belongs to the EconoDUAL family, designed for compact power electronics. It represents the E4 generation of Trenchstop technology, balancing conduction and switching losses. The single IGBT design simplifies circuit topology compared to dual modules, offering flexibility for half-bridge or standalone switching applications in robust industrial settings.
Check for direct substitutes within the same Trenchstop IGBT4 series with identical voltage and current ratings. Verify mechanical compatibility if replacing existing assemblies. Consider newer generations only if thermal or efficiency improvements are explicitly documented as compatible upgrades.