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Product Detailed Parameters
- Description：IGBT MODULE LOW POWER ECONO
- Series：-
- Mfr：Infineon Technologies
- Package：Tray
- IGBT Type：-
- Configuration：-
- Vce(on) (Max) @ Vge, Ic：-
- Input：-
- NTC Thermistor：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Power - Max：-
- Current - Collector Cutoff (Max)：-
- Input Capacitance (Cies) @ Vce：-
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Overview
The DF600R12N2E4PB11BPSA1 is a dual IGBT module from Infineon Technologies, designed for low-power applications within the EconoDUAL family. It features a 1200 V collector-emitter voltage rating and a continuous collector current of 600 A at 25°C. The device utilizes Trenchstop IGBT4 technology with Si base material. Key electrical parameters include a collector-emitter saturation voltage of 1.75 V and a maximum gate-emitter voltage of 20 V. It operates within a temperature range of -40°C to +150°C and employs screw mount installation in a tray package.
Feature Summary
- Integrates Trenchstop IGBT4 technology for optimized switching performance and reliability.
- Features a compact EconoDUAL package design suitable for efficient power conversion systems.
- Provides robust thermal management capabilities for high-current industrial applications.
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- Induction heating systems
Procurement Notes
Verify the exact part number suffix against official Infineon documentation to ensure correct configuration. Confirm RoHS compliance status and specific datasheet revisions prior to ordering. Check for obsolescence notices or recommended new designations. Ensure supply chain partners provide valid traceability documents. Validate packaging specifications against project requirements.
Selection Notes
Select this component for applications requiring high current handling with moderate voltage ratings. Consider the 1.75 V saturation voltage for efficiency calculations in conduction losses. Evaluate the thermal resistance characteristics against the system's cooling infrastructure. Compare against other Trenchstop IGBT4 variants for pin compatibility and package dimensions. Assess the suitability of the dual configuration for half-bridge topologies.
Part Context
This module belongs to the Trenchstop IGBT4 series, representing an evolution in silicon-based power semiconductor technology. It is part of the broader EconoDUAL product line, which standardizes packaging for various current ratings. The series emphasizes improved short-circuit withstand capability and reduced switching losses compared to previous generations.
Replacement Considerations
Consult official Infineon substitution guides for direct replacements. Verify mechanical footprint and pinout compatibility before integrating alternative parts. Cross-reference thermal and electrical specifications to ensure equivalent performance in the target application.
