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The DF75R12W1H4FB11BOMA2 is a three-phase inverter IGBT module manufactured by Infineon Technologies. It features a 1200 V collector-emitter voltage rating and a 25 A continuous collector current capability. The device utilizes chassis mount packaging for robust mechanical integration. Key electrical parameters include a maximum power dissipation of 20 mW, as specified in component documentation. The module operates within a temperature range of -40°C to +150°C. This silicon-based component is designed for high-power applications requiring reliable switching performance.
Verify the specific suffix BOMA2 against official Infineon documentation to confirm package type and terminal configuration. Ensure compatibility with existing cooling solutions due to chassis mount requirements. Cross-reference part numbers with authorized distributors to avoid counterfeit components. Confirm RoHS compliance status through current datasheets before finalizing procurement orders.
Select this module for applications requiring a 1200 V rating and 25 A current capacity in a three-phase topology. Consider the chassis mount form factor when designing PCB or baseplate layouts. Evaluate thermal resistance characteristics against system heat sink capabilities. Compare against alternative Easy1B series modules if pinout flexibility is required.
This component belongs to the Easy1B-2-1 family of IGBT modules from Infineon Technologies. The series is characterized by compact packaging suitable for various industrial power electronics applications. Modules in this family typically integrate TrenchStop™ technology for optimized switching losses and improved short-circuit withstand capability.
Direct substitutes may include other Easy1B-2-1 variants with matching voltage and current ratings. Verify pin-to-pin compatibility and thermal interface dimensions before substitution. Consult Infineon's replacement guide for cross-referencing similar packages with different electrical specifications.