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Product Detailed Parameters
- Description：LOW POWER EASY
- Series：EasyPACK™
- Mfr：Infineon Technologies
- Package：Tray
- IGBT Type：Trench Field Stop
- Configuration：2 Independent
- Vce(on) (Max) @ Vge, Ic：1.72V @ 15V, 20A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：AG-EASY1B-2
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：40 A
- Power - Max：-
- Current - Collector Cutoff (Max)：12 µA
- Input Capacitance (Cies) @ Vce：2 nF @ 25 V
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Overview
The DF80R07W1H5FPB11BPSA1 is a booster IGBT module from Infineon Technologies, utilizing TRENCHSTOP™ 5 H5 technology and CoolSiC™ Schottky diodes. It features a 650 V collector-emitter voltage (VCES) with an implemented collector current of 40 A and a repetitive peak current of 80 A. The continuous DC collector current is rated at 20 A at a heatsink temperature of 100°C. The module incorporates PressFIT contact technology and comes with pre-applied thermal interface material. It includes an integrated NTC temperature sensor for thermal monitoring.
Feature Summary
- Integrates TRENCHSTOP™ 5 H5 IGBTs with CoolSiC™ Gen 5 Schottky diodes to enhance blocking voltage capability up to 650 V.
- Features a low-inductive design that minimizes stray inductance to reduce switching losses during operation.
- Utilizes PressFIT connection technology combined with pre-applied thermal interface material for simplified mechanical assembly.
- Includes an integrated NTC thermistor on an Al2O3 substrate with low thermal resistance for accurate temperature sensing.
Applications
- Solar applications
- Inverter circuits
- Boost converter stages
Procurement Notes
Verify the specific ordering suffix BPSA1 against official documentation to confirm the inclusion of PressFIT contacts and pre-applied thermal interface material. Ensure compatibility with the required mounting force specifications and check for any storage or shipment guidelines related to modules containing TIM.
Selection Notes
Select this component for designs requiring a 650 V rating with high surge current handling capabilities up to 80 A. Consider the thermal resistance values provided for both the IGBT and diode junctions when designing the cooling system. Verify that the gate drive circuitry supports the specified threshold voltages and internal gate resistor characteristics.
Part Context
This module belongs to the EasyPACK™ family and utilizes TRENCHSTOP™ 5 H5 technology. It combines silicon IGBTs with silicon carbide diodes to improve efficiency. The package is designed for screw or press-fit mounting, offering a compact solution for power conversion systems requiring robust thermal management and reliable electrical isolation.
Replacement Considerations
Public confirmed substitute part numbers are not available in the verified source material. Consult official Infineon documentation for potential cross-references within the EasyPACK™ series.
FAQ
What is the maximum repetitive peak collector current?
The maximum repetitive peak collector current (ICRM) is 80 A for a pulse duration of 1 ms.
Does the module include an integrated temperature sensor?
Yes, the module features an integrated NTC temperature sensor with a nominal resistance of 5.00 kΩ at 25°C.
What type of contact technology does this module use?
The module uses PressFIT contact technology for connecting to the PCB.
