DF8MR12W1M1HFB67BPSA1

Overview

The DF8MR12W1M1HFB67BPSA1 is a CoolSiC booster module in the EasyPACK package. It features a 1200 V drain-source voltage and a continuous DC drain current of 45 A at 175 °C junction temperature. The on-state resistance is 16.2 mΩ at 25 °C. The module includes an integrated NTC thermistor with a rated resistance of 5 kΩ at 25 °C. Stray inductance is limited to 10 nH, and thermal resistance from junction to heat sink is 1.1 K/W per MOSFET.

Feature Summary

• Integrated NTC temperature sensor for thermal monitoring
• PressFIT contact technology for robust mounting
• Low inductive design for high switching performance
• High current density utilizing CoolSiC Trench MOSFETs

Applications

• Solar applications

Procurement Notes

Verify the datasheet revision matches the specific manufacturing batch requirements. Confirm that the PressFIT termination style aligns with the target PCB footprint and mounting force specifications. Ensure the operating environment complies with the industrial qualification standards defined in IEC 60747, 60749, and 60068.

Selection Notes

Select this component when a single-phase boost topology requires high efficiency at elevated temperatures. The 1200 V rating provides headroom for grid-tied systems. The integrated NTC simplifies thermal management compared to discrete solutions. Verify gate drive compatibility with the specified threshold voltages and internal gate resistance values.

Part Context

This part belongs to the Infineon CoolSiC M1H series within the EasyPACK form factor. It utilizes silicon carbide technology to achieve superior thermal and electrical performance over traditional silicon devices. The module integrates a MOSFET and a boost diode into a single compact unit designed for power conversion stages.

Replacement Considerations

Consult official replacement lists for updated generations or alternative packages. Verify pinout compatibility and thermal characteristics before substituting.