DF900R12IP4DBOSA1

$336.37

Description：IGBT MOD 1200V 900A 5100W
Series：PrimePACK™2

SKU:2551a3533190 Category: IGBT Modules Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT MOD 1200V 900A 5100W
Series：PrimePACK™2
Mfr：Infineon Technologies
Package：Tray
IGBT Type：Trench Field Stop
Configuration：Single Chopper
Vce(on) (Max) @ Vge, Ic：2.05V @ 15V, 900A
Input：Standard
NTC Thermistor：Yes
Operating Temperature：-40°C ~ 150°C
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：Module
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：900 A
Power - Max：5100 W
Current - Collector Cutoff (Max)：5 mA
Input Capacitance (Cies) @ Vce：54 nF @ 25 V

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DF900R12IP4DBOSA1

Overview

The DF900R12IP4DBOSA1 is a single IGBT module from Infineon Technologies, utilizing Trench/Fieldstop IGBT4 technology with an enlarged Emitter Controlled 4 diode. It features a PrimePACK™2 housing and offers a collector-emitter voltage (VCES) of 1200 V and a continuous DC collector current (IC nom) of 900 A at TC = 100°C. The repetitive peak collector current (ICRM) reaches 1800 A for 1 ms pulses. Typical saturation voltage (VCEsat) is 2.05 V at Tvj = 25°C, while the typical forward voltage (VF) of the integrated diode is 1.65 V. The module includes an NTC thermistor rated at 5 kΩ at 25°C and provides 4 kV AC insulation capability.

Feature Summary

High short-circuit robustness with self-limiting short-circuit current characteristics
Extended operation temperature range up to 175°C junction temperature
Positive temperature coefficient for collector-emitter saturation voltage
High power density with low thermal resistance substrate design

Applications

Chopper applications in industrial drives
Medium voltage motor control systems
Power conversion units requiring high DC stability

Procurement Notes

Verify the specific ordering suffix BOSA1 against official documentation to confirm compliance details or material specifications. Confirm RoHS status and REACH requirements prior to integration. Ensure mounting torque adheres strictly to the valid application notes for M4 and M8 terminals to maintain mechanical integrity and electrical performance.

Selection Notes

Select this component for chopper topologies requiring high current handling and robust short-circuit protection. Evaluate thermal management based on the specified RthJC values for both IGBT and diode sections. Consider the positive temperature coefficient for parallel operation stability. Verify gate drive compatibility with the internal gate resistor and charge requirements.

Part Context

This module belongs to the PrimePACK™2 series, designed for high power density and reliable thermal cycling. It integrates Trench/Fieldstop IGBT4 technology with an enlarged diode structure. The package utilizes a copper baseplate and Al2O3 internal isolation to ensure high creepage and clearance distances, supporting demanding industrial environments.