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Product Detailed Parameters
- Description：IGBT MOD 1200V 900A 5100W
- Series：PrimePACK™2
- Mfr：Infineon Technologies
- Package：Bulk,Tray
- IGBT Type：Trench Field Stop
- Configuration：Single Chopper
- Vce(on) (Max) @ Vge, Ic：2.05V @ 15V, 900A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：900 A
- Power - Max：5100 W
- Current - Collector Cutoff (Max)：5 mA
- Input Capacitance (Cies) @ Vce：54 nF @ 25 V
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Overview
The DF900R12IP4DVBOSA1 is a PrimePACK™2 IGBT module utilizing Trench/Fieldstop IGBT4 technology with an enlarged Emitter Controlled 4 diode. It features a collector-emitter voltage (VCES) of 1200 V and a nominal continuous DC collector current (IC nom) of 900 A at TC = 100°C. The repetitive peak collector current (ICRM) reaches 1800 A for 1 ms pulses. Typical saturation voltage (VCEsat) is 2.05 V at Tvj = 150°C, while the diode forward voltage (VF) is 1.65 V at Tvj = 25°C. Thermal resistance from junction to case is 29.5 K/kW per IGBT and 37.0 K/kW per diode. The module includes an integrated NTC thermistor rated at 5.00 kΩ at 25°C.
Feature Summary
- High short-circuit capability with self-limiting short-circuit current behavior
- Extended operation temperature range up to 150°C under switching conditions
- Robust insulation with 4 kV AC isolation and high creepage/clearance distances
- Positive temperature coefficient for VCEsat ensuring stable parallel operation
Applications
- Hybrid commercial vehicles
- Agricultural vehicles
- Industrial drives requiring high power density
Procurement Notes
Verify component authenticity through official Infineon channels or authorized distributors. Confirm RoHS compliance status and check for end-of-life notifications as this series may be subject to discontinuation. Ensure proper handling procedures are followed due to the sensitivity of semiconductor components to electrostatic discharge during installation.
Selection Notes
Select based on thermal management requirements given the specific RthJC values. Verify gate drive compatibility with the specified internal gate resistor and threshold voltages. Ensure the application voltage does not exceed the 1200 V rating under transient conditions. Consider the mechanical mounting torque specifications for reliable electrical connections.
Part Context
This component belongs to the PrimePACK™2 family designed for industrial applications. It represents an evolution in IGBT4 technology focusing on improved short-circuit robustness and reduced saturation voltage compared to previous generations. The package format allows for high power density integration in compact systems.
Replacement Considerations
DF900R12IP4DV
FAQ
What is the maximum short-circuit time allowed?
The module supports a maximum short-circuit time (tP) of 10 µs at Tvj = 150°C with VCC = 800 V.
Does the module include thermal monitoring?
Yes, it integrates an NTC thermistor with a nominal resistance of 5.00 kΩ at 25°C for temperature monitoring.
What is the typical turn-off energy loss?
At Ic = 900 A, Vce = 600 V, and Tvj = 150°C, the typical turn-off energy loss (Eoff) is 205 mJ.
