DI001N65PTK-AQ

Overview

The DI001N65PTK-AQ is an N-Channel Power MOSFET in a QFN3x3 (DFN3030) package. It features a drain-source voltage of 650 V and a continuous drain current of 1 A at 25°C. The typical on-state resistance is 1.4 Ω, with a maximum power dissipation of 31.2 W. Key electrical parameters include a gate threshold voltage of 2 to 4 V, total gate charge of 5.8 nC, and single pulse avalanche energy of 19.3 mJ. The device operates within a junction temperature range of -55°C to +150°C.

Feature Summary

• ESD protected gate structure
• Controlled avalanche characteristic
• Tiny, space saving low profile package

Applications

• Power Factor Correction (PFC)
• Flyback Converters
• Power Supplies
• DC Drives

Procurement Notes

Verify the suffix -AQ indicates the component is in AEC-Q101 qualification rather than fully compliant. Confirm the specific package variant matches the required footprint. Check for RoHS compliance status without exemptions. Ensure the ordering code aligns with the tape and reel quantity specified by the manufacturer.

Selection Notes

Select this component for high-voltage applications requiring compact footprints. The 650 V rating suits industrial and commercial grade environments. Evaluate thermal management needs based on the 31.2 W dissipation limit. Consider the controlled avalanche feature for inductive load protection.

Part Context

This part belongs to Diotec's N-Channel Power MOSFET lineup designed for modern electronics. It targets commercial and industrial sectors where space constraints are critical. The QFN3x3 package allows for dense PCB layouts while maintaining necessary electrical isolation and thermal performance standards.

Replacement Considerations

No public confirmed substitute part numbers are available.