DI005C04PTK

$0.12

Description：DI005C04PTK
Series：*

SKU:9315078b31d5 Category: FET, MOSFET Arrays Brand: Diotec Semiconductor

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Product introduction

Product Detailed Parameters

Description：DI005C04PTK
Series：*
Mfr：Diotec Semiconductor
Package：Bulk
Technology：-
Configuration：-
FET Feature：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

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DI005C04PTK

Overview

The DI005C04PTK is a dual N+P channel power MOSFET in a QFN3x3 package. The N-channel (Q1) offers a maximum drain-source voltage of 40 V, continuous current of 15 A, and on-resistance under 35 mΩ at 10 V gate drive. The P-channel (Q2) provides -40 V breakdown, -11 A current, and resistance below 60 mΩ at -10 V. It features low gate charge and fast switching times. Operating temperature ranges from -55°C to +150°C. Suffixes -Q and -AQ denote AEC-Q101 compliance or qualification.

Feature Summary

Dual complementary MOSFETs integrated into a tiny, space-saving package with low profile height.
Low on-state resistance and low gate charge for efficient power management.
Fast switching times suitable for high-frequency applications.
Compliant with RoHS, REACH, and Conflict Minerals regulations.

Applications

Power Management Units
Battery powered devices
Load Switches
Polarity Protection

Procurement Notes

Verify the specific ordering suffix when purchasing. The base model DI005C04PTK represents the standard commercial/industrial grade. Select the -Q suffix for AEC-Q101 compliant parts or the -AQ suffix for AEC-Q101 qualified components. Confirm that the required automotive reliability standards match the selected suffix before finalizing procurement orders.

Selection Notes

Select this component for applications requiring compact dual MOSFET solutions. Ensure the gate drive voltage meets the requirements for the specified on-resistance thresholds. Verify thermal dissipation capabilities based on the PCB copper pad area, as the rated power dissipation assumes a 6.45 cm² copper pad. Consider the -AQ suffix if strict automotive qualification is mandated by the design specifications.

Part Context

This part belongs to Diotec Semiconductor's lineup of dual MOSFETs designed for space-constrained environments. It integrates both N-channel and P-channel devices into a single QFN3x3 footprint. This integration reduces board space compared to using discrete transistors. The device targets general commercial and industrial power management tasks where size and efficiency are critical constraints.