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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 5A 8SO
- Series：-
- Mfr：Diotec Semiconductor
- Package：Bulk
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：5A (Ta)
- Rds On (Max) @ Id, Vgs：40mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：22nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1295pF @ 25V
- Power - Max：1.3W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
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Overview
The DI005N06SQ2 is a dual N-channel power MOSFET manufactured by Diotec Semiconductor. It integrates two independent N-channel MOSFETs within a single SO-8 package, designed for space-constrained applications. The device features a drain-source voltage (VDSS) of 60 V and a continuous drain current (ID) of 5 A at 25°C. The on-state resistance (RDS(on)) is specified as less than 40 mΩ at VGS = 10 V and ID = 4.5 A. With a maximum junction temperature (Tjmax) of 150°C and power dissipation (PD) of 1.7 W, it supports switching frequencies in DC/DC converters and synchronous rectifiers.
Feature Summary
- Dual MOSFET configuration integrating two channels in one component
- Low profile SO-8 package optimized for space-saving designs
- Fast switching times with low gate charge characteristics
- Compliant with RoHS, REACH, and Conflict Minerals regulations
Applications
- DC/DC Converters
- Power Supplies
- DC Drives
- Synchronous Rectifiers
Procurement Notes
Verify the specific ordering suffix when purchasing. The standard version is commercial or industrial grade. Suffix -Q indicates AEC-Q101 compliance, while suffix -AQ denotes AEC-Q101 qualification. Confirm these designations match project requirements before procurement to ensure correct reliability grading.
Selection Notes
Select this component for applications requiring dual N-channel isolation in a compact footprint. Ensure the PCB layout provides sufficient copper area, specifically 645 mm² at the drain terminals, to achieve the rated 5 A continuous current and 1.7 W power dissipation. Verify thermal management capabilities against the junction-to-ambient resistance specifications.
Part Context
This part belongs to Diotec's Dual N-Channel Power MOSFET series. It utilizes an SO-8 case material rated UL 94V-0. The component is supplied in taped and reeled packaging, typically containing 4000 units per 13-inch reel. It includes SPICE models and STEP files for simulation and mechanical integration.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Evaluate alternatives based on matching VDSS, RDS(on), and package dimensions.
