DI005P04PW

$0.13

Description：DI005P04PW
Series：-
Mfr：Diotec Semiconductor
Package：Bulk

SKU:aab597b148d0 Category: Single FETs, MOSFETs Brand: Diotec Semiconductor

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Product introduction

Product Detailed Parameters

Description：DI005P04PW
Series：-
Mfr：Diotec Semiconductor
Package：Bulk
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：40mOhm @ 4A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：19 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1078 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：2W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：6-QFN (2x2)
Package / Case：6-PowerUDFN

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DI005P04PW

Overview

The DI005P04PW is a P-Channel Power MOSFET manufactured by Diotec Semiconductor, housed in a QFN2x2 package. It features a Drain-Source voltage (VDSS) of -40 V and continuous drain current (-ID) ratings of 6 A at 25°C ambient temperature and 14 A at 25°C case temperature. The device exhibits a maximum on-state resistance (RDS(on)) of 40 mΩ at VGS = -10 V and 55 mΩ at VGS = -4.5 V. Key dynamic parameters include a total gate charge (Qg) of 19 nC at VDD = -20 V and 8.8 nC at VDD = -4.5 V. Thermal characteristics specify a junction-to-ambient thermal resistance (RthJA) of 62.5 K/W and a junction-to-case bottom resistance (RthJC) of 13 K/W.

Feature Summary

Low profile, space-saving QFN2x2 package design
Avalanche rated for robust operation under transient conditions
Fast switching times with low gate charge
Compliant to RoHS standards without exemptions

Applications

DC/DC Converters
Power Supplies
DC Drives
Power Tools
Synchronous Rectifiers

Procurement Notes

Verify the specific suffix when ordering: standard versions are commercial/industrial grade, while suffixes -Q indicate AEC-Q101 compliance and -AQ denote active qualification. Confirm the required reliability grade matches the application environment before procurement. Ensure sourcing channels provide official documentation to validate the component's automotive or industrial status.

Selection Notes

Select this component for applications requiring compact P-Channel switching with low on-state resistance. Evaluate thermal management based on the specified RthJA and RthJC values, as power dissipation is limited to 2 W at 25°C ambient. Consider the avalanche energy rating (EAS) if the circuit experiences inductive load transients. Verify that the gate drive voltage meets the threshold requirements for optimal RDS(on) performance.

Part Context

This part belongs to Diotec's lineup of discrete semiconductors designed for modern electronics. It serves as a compact switching solution within the company's broader portfolio of MOSFETs and protection devices. The QFN2x2 form factor aligns with industry trends toward miniaturization in consumer and industrial electronics.