DI010N03PW

$0.51

Description：MOSFET POWERQFN 2X2 N 30V 10A 0.
Series：-
Mfr：Diotec Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:18cf6e077eba Category: Single FETs, MOSFETs Brand: Diotec Semiconductor

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET POWERQFN 2X2 N 30V 10A 0.
Series：-
Mfr：Diotec Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：12mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：25 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1120 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.4W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-QFN (2x2)
Package / Case：8-PowerUDFN

Download product information

DI010N03PW

Overview

The DI010N03PW is an N-Channel Power MOSFET manufactured by Diotec Semiconductor, designed for commercial and industrial applications. It features a compact QFN2x2 package with a maximum drain-source voltage (VDSS) of 30 V and a continuous drain current (ID) of 10 A at 25°C. The device exhibits a low on-state resistance (RDS(on)) of less than 12 mΩ at VGS = 10 V and ID = 10 A. Key electrical parameters include a gate-source threshold voltage (VGS(th)) ranging from 1 V to 2 V, a total gate charge (Qg) of 25 nC, and a power dissipation (PD) of 1.4 W. The component supports a junction temperature range of -55°C to +150°C.

Feature Summary

Tiny, space-saving package with low profile height
Low on-state resistance for efficient power handling
Fast switching times with low gate charge
Compliant to RoHS standards without exemptions

Applications

Power Management Units
Battery powered devices
DC-DC Converters
Load Switches

Procurement Notes

Verify the specific ordering suffix when procuring the DI010N03PW. The standard version is intended for commercial and industrial grade use. Suffixes such as -Q indicate AEC-Q101 compliance, while -AQ denotes AEC-Q101 qualification. Confirm that the required automotive or industrial reliability grade matches the project specifications before finalizing orders.

Selection Notes

Select the DI010N03PW for designs requiring high current density in minimal board space. Its low RDS(on) minimizes conduction losses, making it suitable for battery-powered systems. Ensure thermal management accounts for the 1.4 W power dissipation rating. Verify that the 30 V breakdown voltage provides adequate margin for the target DC bus voltage.

Part Context

This component belongs to Diotec's Power MOSFET portfolio, specifically utilizing silicon technology. It is housed in a leadless QFN2x2 case material rated UL 94V-0. The device is supplied in taped and reeled packaging, weighing approximately 0.05 g. It is classified under HS Code 85412100 and marked with code MY.