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Product Detailed Parameters
- Description：DI018N65D1
- Series：-
- Mfr：Diotec Semiconductor
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：190mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：23 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：1200 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：142W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252 (DPAK)
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The DI018N65D1 is an N-Channel Power MOSFET from Diotec Semiconductor, housed in a TO-252AA (D-Pak) package. It features a drain-source voltage of 650 V and a continuous drain current of 18 A at 25°C case temperature. The device exhibits a maximum on-state resistance of 190 mΩ at VGS = 10 V. With a power dissipation rating of 142 W and a junction temperature range up to 175°C, it supports avalanche energy ratings of 64 mJ. Dynamic characteristics include turn-on delay times around 42 ns and total gate charge of 23 nC.
Feature Summary
- Advanced Trench Technology for low on-state resistance
- Avalanche rated capability for robust operation
- Fast switching times suitable for high-frequency applications
- Compliant with RoHS, REACH, and Conflict Minerals regulations
Applications
- DC/DC Converters
- Power Supplies
- DC Drives
- Synchronous Rectifiers
Procurement Notes
Verify the specific ordering suffix when purchasing. The standard version is commercial/industrial grade. Suffix -Q indicates AEC-Q101 compliance, while -AQ denotes qualification status. Confirm package type and tape-and-reel specifications match design requirements before finalizing orders.
Selection Notes
Select this component for designs requiring high voltage blocking and moderate current handling in compact surface-mount packages. Evaluate thermal management needs based on the 142 W dissipation limit at 25°C case temperature. Consider the 190 mΩ RDS(on) for conduction loss calculations and ensure gate drive voltages align with the specified threshold and maximum ratings.
Part Context
This part belongs to Diotec's N-Channel Power MOSFET lineup, utilizing advanced trench technology. It is designed for general-purpose switching applications in commercial and industrial electronics. The TO-252AA package provides a balance between power handling and PCB space efficiency.
Replacement Considerations
Check datasheets for alternative MOSFETs with similar VDSS (650V), ID (18A), and RDS(on) (<0.2Ω). Verify pinout compatibility for TO-252AA packages and ensure thermal resistance values meet system cooling constraints.
FAQ
What is the maximum avalanche energy rating?
The single pulse avalanche energy is rated at 64 mJ under test conditions of VDD = 50 V, VG = 10 V, L = 10 mH, and RG = 25 Ω.
Is this component suitable for automotive applications?
The standard DI018N65D1 is for commercial/industrial use. Automotive-grade versions are available with the -Q (compliant) or -AQ (qualified) suffixes indicating AEC-Q101 standards.
