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The DI020N06D1-AQ is an N-Channel Power MOSFET utilizing advanced trench technology, designed for commercial and industrial applications. It features a drain-source voltage of 60 V and a continuous drain current of 20 A at 25°C case temperature. The device offers a maximum on-state resistance of 35 mΩ at VGS=10V and 40 mΩ at VGS=4.5V. It supports a power dissipation of 25 W at 25°C and operates within a junction temperature range of -55°C to +175°C. The component is qualified to the AEC-Q101 standard.
Verify that the ordering suffix matches the required qualification level. The base model represents commercial grade, while the -AQ suffix indicates AEC-Q101 qualification. Confirm package type and tape-and-reel specifications during procurement to ensure compatibility with assembly equipment.
Select this component when a 60 V N-Channel MOSFET is required for synchronous rectification or DC drive applications. Ensure thermal management meets the specified RthJC limits. Verify that the gate drive voltage aligns with the threshold requirements for optimal conduction characteristics.
This part belongs to Diotec Semiconductor's N-Channel Power MOSFET lineup. It is manufactured in a TO-252AA (D-PAK) package. The product line includes variants with different automotive qualifications, such as the -Q compliant and -AQ qualified versions.
Public confirmed substitute part numbers are not available in the provided documentation.