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The DI020P06PT-AQ is a P-Channel Power MOSFET from Diotec Semiconductor, designed for commercial and industrial applications. It features a QFN3x3 (DFN3030) package with a maximum drain-source voltage of -60 V and a continuous drain current of -20 A at 25°C. The device exhibits a low on-state resistance of typically 36 mΩ at VGS = 10 V and up to 45 mΩ at VGS = 4.5 V. Key electrical parameters include a gate-source threshold voltage ranging from 1.0 V to 2.5 V, a total gate charge of 34 nC, and a power dissipation capacity of 35.7 W at 25°C. The component supports a junction temperature up to 175°C and complies with the AEC-Q101 automotive standard.
Verify that the specific part number includes the '-AQ' suffix to confirm AEC-Q101 qualification status. Ensure the ordering documentation matches the exact marking code '306P450'. Confirm compliance requirements such as RoHS and REACH directly with the manufacturer's latest datasheet before finalizing procurement specifications.
Select this component when a compact P-Channel MOSFET is required for high-current switching in space-constrained designs. The low thermal resistance allows for effective heat dissipation in small footprints. Consider the threshold voltage range to ensure compatibility with the intended logic or driver levels for reliable turn-on performance.
This device belongs to Diotec's P-Channel MOSFET family, specifically engineered for modern electronic systems requiring robust performance in minimal physical dimensions. The integration of AEC-Q101 qualification expands its suitability beyond standard consumer electronics into demanding automotive environments where reliability under varying thermal conditions is critical.
No public confirmed substitute part numbers are documented in the provided source material.