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The DI022N20PQ-AQ is an N-Channel Power MOSFET in a QFN5x6 package. It features a drain-source voltage of 200 V and a continuous drain current of 22 A at 25°C case temperature. The typical on-state resistance is 42 mΩ, with a power dissipation rating of 60 W. The device supports logic level gate drive and includes avalanche-rated characteristics verified by 100% testing.
Verify the specific suffix -AQ to confirm AEC-Q101 qualification status, as standard commercial grades lack this automotive certification. Ensure the ordering documentation explicitly references the DI022N20PQ part number to distinguish it from non-qualified variants. Confirm RoHS compliance details directly with the manufacturer's latest datasheet revision before finalizing procurement specifications.
Select this component for applications requiring low on-state resistance and fast switching times within a compact footprint. The 200 V rating and 22 A current capacity suit medium-power conversion tasks. Verify thermal management requirements against the junction-to-case thermal resistance value to ensure reliable operation under expected load conditions.
This component belongs to Diotec Semiconductor's N-Channel Power MOSFET lineup, specifically designed for high-efficiency power switching. The -AQ suffix indicates AEC-Q101 qualification, distinguishing it from standard commercial grade parts. It utilizes a QFN5x6 (TDSON-8 / DFN5060) surface-mount package optimized for space-constrained designs.
No public confirmed substitute part numbers are available.