DI022P06D1-AQ

$0.23

Description：DI022P06D1-AQ
Series：-
Mfr：Diotec Semiconductor
Package：Bulk

SKU:f99ceaab18a1 Category: Single FETs, MOSFETs Brand: Diotec Semiconductor

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Product introduction

Product Detailed Parameters

Description：DI022P06D1-AQ
Series：-
Mfr：Diotec Semiconductor
Package：Bulk
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：45mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：35 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2098 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：43W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TO-252 (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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DI022P06D1-AQ

Overview

The DI022P06D1-AQ is a P-Channel Power MOSFET manufactured by Diotec Semiconductor, housed in a TO-252AA (D-Pak) package. It features an advanced trench technology with a drain-source voltage of -60 V and a continuous drain current of -22 A at 25°C. The device exhibits a maximum on-state resistance of 60 mΩ at VGS = -4.5 V and 45 mΩ at VGS = -10 V. Rated for a power dissipation of 43 W and junction temperatures up to 150°C, it includes avalanche energy ratings of 30 mJ. The suffix -AQ indicates the component is currently undergoing AEC-Q101 qualification.

Feature Summary

Advanced Trench Technology
Low On-State Resistance
Fast Switching Times
Avalanche Rated

Applications

DC/DC Converters
Power Supplies
DC Drives
Synchronous Rectifiers

Procurement Notes

Verify the specific qualification status of the -AQ suffix before procurement, as official documentation states this variant is 'in AEC-Q101 qualification' rather than fully compliant. Confirm that the TO-252AA mechanical dimensions and MSL 3 moisture sensitivity rating align with your assembly requirements. Ensure thermal management designs account for the specified RthJC and RthJA values under expected operating conditions.

Selection Notes

Select this component for applications requiring high current handling in a compact D-Pak footprint. The low gate charge and fast switching characteristics make it suitable for efficient power conversion circuits. Consider the -60 V rating when designing systems with potential voltage spikes. Evaluate the thermal performance against the 43 W dissipation limit based on your PCB copper pad area and ambient temperature constraints.

Part Context

This part belongs to Diotec's P-Channel Power MOSFET lineup, designed for commercial and industrial grade applications. It utilizes silicon technology and complies with RoHS directives, excluding exemption 7a-I, as well as REACH regulations. The manufacturer provides SPICE models and STEP files to support circuit simulation and mechanical integration during the design phase.