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Product Detailed Parameters
- Description：MOSFET POWERQFN 3X3 N 65V
- Series：-
- Mfr：Diotec Semiconductor
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：65 V
- Current - Continuous Drain (Id) @ 25°C：25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：20mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：9 nC @ 30 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：406 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：25W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-QFN (3x3)
- Package / Case：8-PowerVDFN
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Overview
The DI025N06PT is an N-Channel Power MOSFET manufactured by Diotec Semiconductor, housed in a compact QFN3x3 package. It features a drain-source voltage (VDSS) of 65 V and a continuous drain current (ID) of 25 A at 25°C case temperature. The device exhibits a low on-state resistance (RDS(on)) of less than 20 mΩ at VGS = 10 V and ID = 8 A. With a maximum junction temperature (Tjmax) of 150°C and power dissipation (PD) of 25 W, it supports fast switching times and low gate charge characteristics suitable for efficient power management.
Feature Summary
- Compact QFN3x3 package with low profile height for space-saving designs
- Low on-state resistance to minimize conduction losses
- Fast switching capabilities with low gate charge
- High thermal stability with Tjmax up to 150°C
Applications
- Power Management Units
- Battery powered devices
- Load Switches
- Polarity Protection circuits
Procurement Notes
Verify the specific ordering suffix when procuring. The standard DI025N06PT is commercial/industrial grade. Suffix -Q indicates AEC-Q101 compliance, while suffix -AQ denotes AEC-Q101 qualification. Confirm the required reliability grade matches the application environment before finalizing orders. Ensure compatibility with RoHS standards and REACH regulations as specified in the datasheet.
Selection Notes
Select this component for applications requiring high efficiency in small form factors. The low RDS(on) and fast switching times make it suitable for battery-operated systems where power conservation is critical. Consider the thermal resistance values for heat dissipation planning. Verify that the 65V rating provides sufficient margin for the intended circuit's peak voltages. Check if automotive-grade qualification is necessary for the target market.
Part Context
This part belongs to Diotec's Power MOSFET lineup designed for modern electronic devices. It complements other components like the DI035N10PT and DI080N06PQ, offering a balance between current handling capability and physical size. The QFN3x3 package allows for dense PCB layouts, fitting into trends for miniaturization in consumer and industrial electronics.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Users should consult Diotec Semiconductor directly or refer to their official product change notices for any recommended alternatives or cross-references.
