DI028N10PQ2-AQ

$0.43

Description：MOSFET 2N-CH 100V 28A 8TDSON
Series：-

SKU:8df3ce2ec375 Category: FET, MOSFET Arrays Brand: Diotec Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 100V 28A 8TDSON
Series：-
Mfr：Diotec Semiconductor
Package：Bulk
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：100V
Current - Continuous Drain (Id) @ 25°C：28A (Tc)
Rds On (Max) @ Id, Vgs：21mOhm @ 7A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：1028pF @ 50V
Power - Max：32.7W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerTDFN
Supplier Device Package：TDSON-8-4
Grade：Automotive
Qualification：AEC-Q101

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DI028N10PQ2-AQ

Overview

The DI028N10PQ2-AQ is a dual N-channel power MOSFET manufactured by Diotec Semiconductor. It features a QFN5x6 Dual package with a drain-source voltage (VDSS) of 100 V and a continuous drain current (ID) of 28 A at 25°C. The device exhibits a low on-state resistance (RDS(on)) of less than 21 mΩ at VGS = 4.5 V. It supports a maximum junction temperature of 175°C, offers an avalanche energy rating of 15 mJ, and provides a power dissipation capability of 32.7 W.

Feature Summary

Dual MOSFET configuration in a low-profile, space-saving package
Low on-state resistance for efficient power handling
Fast switching times combined with low gate charge
Avalanche rated for robust operation under transient conditions

Applications

DC/DC Converters
Power Supplies
DC Drives
Synchronous Rectifiers

Procurement Notes

Verify the specific suffix to confirm automotive qualification status. The -AQ suffix indicates AEC-Q101 qualified components suitable for automotive environments, while other suffixes may denote standard commercial or industrial grades. Confirm RoHS compliance and REACH requirements during sourcing. Ensure thermal management aligns with the specified junction-to-case thermal resistance limits.

Selection Notes

Select this component when a compact dual N-channel solution is required for 100V applications. The low RDS(on) minimizes conduction losses, making it suitable for synchronous rectification. Evaluate the 175°C maximum junction temperature against your system's thermal design. Consider the 15 mJ avalanche energy rating if the circuit experiences inductive load switching.

Part Context

This part belongs to Diotec’s dual MOSFET portfolio designed for high-density power electronics. It utilizes a QFN5x6 Dual case to reduce footprint compared to traditional packages. The device integrates two independent N-channel MOSFETs within a single assembly, optimizing board space for bridge and half-bridge topologies.