SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The DI028N10PQ2 is a dual N-channel power MOSFET manufactured by Diotec Semiconductor. It features a QFN5x6 package with a maximum drain-source voltage (VDSS) of 100 V and a continuous drain current (ID) of 28 A at 25°C. The device exhibits a low on-state resistance (RDS(on)) of less than 21 mΩ at VGS = 4.5 V. It supports a peak drain current of 130 A and has a power dissipation rating of 32.7 W at 25°C. The junction temperature range extends from -55°C to +175°C, and the component is avalanche rated with an energy capability of 15 mJ.
Verify the specific suffix when ordering. The standard version is commercial or industrial grade. Suffixes -Q indicate AEC-Q101 compliance, while -AQ indicates AEC-Q101 qualification. Confirm the required reliability grade matches the application needs before procurement.
Select this component for applications requiring dual N-channel MOSFETs in a space-saving footprint. Ensure the thermal design accommodates the specified RthJC and RthJA values. Verify that the operating voltage and current limits remain within the safe operating area defined in the datasheet.
This part belongs to Diotec's Dual N-Channel Power MOSFET series. It utilizes a QFN5x6 case outline designed for surface mount technology. The marking code for identification is 610N170. The product is supplied in tape and reel packaging.
Publicly confirmed substitute part numbers are not available in the provided documentation. Consult official distributor databases for cross-reference data.