DI035N06PQ2-AQ

DI035N06PQ2-AQ

$0.30
  • Description:MOSFET 2N-CH 60V 35A 8TDSON
  • Series:-

SKU:a507e4c6a8ce Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 60V 35A 8TDSON
  • Series:-
  • Mfr:Diotec Semiconductor
  • Package:Bulk
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):60V
  • Current - Continuous Drain (Id) @ 25°C:35A (Tc)
  • Rds On (Max) @ Id, Vgs:15mOhm @ 12A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:14.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:782pF @ 30V
  • Power - Max:35.7W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-PowerTDFN
  • Supplier Device Package:TDSON-8-4
  • Grade:Automotive
  • Qualification:AEC-Q101

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DI035N06PQ2-AQ

Overview

The DI035N06PQ2-AQ is a dual N-Channel Power MOSFET manufactured by Diotec Semiconductor. It features a QFN5x6 Dual package with a drain-source voltage (VDSS) of 60 V and a continuous drain current (ID) of 35 A at 25°C case temperature. The device exhibits a maximum on-state resistance (RDS(on)) of 15 mΩ at VGS = 10 V and 20 mΩ at VGS = 4.5 V. It supports a power dissipation (PD) of 35.7 W, a peak drain current (IDM) of 110 A, and an avalanche energy rating (EAS) of 12.8 mJ. The component operates within a junction temperature range of -55°C to +175°C.

Feature Summary

  • Dual MOSFET configuration in a low-profile, space-saving package
  • Logic level gate drive capability for efficient control
  • Avalanche rated with 100% avalanche testing
  • Low on-state resistance and fast switching times

Applications

  • DC/DC Converters
  • Power Supplies
  • DC Drives
  • Synchronous Rectifiers

Procurement Notes

Verify the specific suffix designation when ordering. The -AQ suffix indicates the component is currently undergoing AEC-Q101 qualification rather than being fully compliant. Confirm final automotive grade status directly with the manufacturer before integrating into qualified automotive designs.

Selection Notes

Select this component for applications requiring high current handling in a compact footprint. Ensure thermal management accounts for the specified RthJA of less than 62 K/W. Verify that the logic-level gate threshold meets the driving circuit requirements, particularly at elevated temperatures where parameters shift.

Part Context

This part belongs to the DI0XX series of dual MOSFETs from Diotec Semiconductor. It shares the QFN5x6 form factor with other variants but is distinguished by its 60V rating and dual-channel architecture. The -AQ suffix differentiates it from the standard commercial or fully qualified -Q versions.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Evaluate alternatives based on matching VDSS, ID, RDS(on), and package dimensions while verifying independent electrical parameter compliance.

DI035N06PQ2-AQDI035N06PQ2-AQ
$0.30
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