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The DI035N06PQ2-AQ is a dual N-Channel Power MOSFET manufactured by Diotec Semiconductor. It features a QFN5x6 Dual package with a drain-source voltage (VDSS) of 60 V and a continuous drain current (ID) of 35 A at 25°C case temperature. The device exhibits a maximum on-state resistance (RDS(on)) of 15 mΩ at VGS = 10 V and 20 mΩ at VGS = 4.5 V. It supports a power dissipation (PD) of 35.7 W, a peak drain current (IDM) of 110 A, and an avalanche energy rating (EAS) of 12.8 mJ. The component operates within a junction temperature range of -55°C to +175°C.
Verify the specific suffix designation when ordering. The -AQ suffix indicates the component is currently undergoing AEC-Q101 qualification rather than being fully compliant. Confirm final automotive grade status directly with the manufacturer before integrating into qualified automotive designs.
Select this component for applications requiring high current handling in a compact footprint. Ensure thermal management accounts for the specified RthJA of less than 62 K/W. Verify that the logic-level gate threshold meets the driving circuit requirements, particularly at elevated temperatures where parameters shift.
This part belongs to the DI0XX series of dual MOSFETs from Diotec Semiconductor. It shares the QFN5x6 form factor with other variants but is distinguished by its 60V rating and dual-channel architecture. The -AQ suffix differentiates it from the standard commercial or fully qualified -Q versions.
Publicly confirmed substitute part numbers are not available in the provided documentation. Evaluate alternatives based on matching VDSS, ID, RDS(on), and package dimensions while verifying independent electrical parameter compliance.