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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 35A 8TDSON
- Series：-
- Mfr：Diotec Semiconductor
- Package：Bulk
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：35A (Tc)
- Rds On (Max) @ Id, Vgs：15mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：14.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：782pF @ 30V
- Power - Max：35.7W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerTDFN
- Supplier Device Package：TDSON-8-4
- Grade：-
- Qualification：-
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Overview
The DI035N06PQ2 is a dual N-channel Power MOSFET manufactured by Diotec Semiconductor. It features a QFN5x6 Dual package with an approximate weight of 0.1 g. Key electrical parameters include a drain-source voltage (VDSS) of 60 V, continuous drain current (ID) of 35 A at 25°C case temperature, and a maximum on-state resistance (RDS(on)) of 15 mΩ at VGS = 10 V. The device supports a peak drain current (IDM) of 110 A and has a power dissipation rating of 35.7 W at 25°C. It operates within a junction temperature range of -55°C to +175°C and includes avalanche energy ratings of 12.8 mJ.
Feature Summary
- Dual MOSFET configuration in a low-profile, space-saving package
- Logic level gate drive capability for efficient control
- Avalanche rated with 100% avalanche testing compliance
- Low on-state resistance and fast switching times
Applications
- DC/DC Converters
- Power Supplies
- DC Drives
- Synchronous Rectifiers
Procurement Notes
Verify the specific suffix when ordering. The standard version is commercial grade. Suffix -Q indicates AEC-Q101 compliance, while -AQ denotes qualification status. Confirm RoHS exemption details if required. Ensure thermal management aligns with the specified RthJC values for optimal performance.
Selection Notes
Select based on required VDSS and ID ratings relative to circuit load. Consider the 15 mΩ RDS(on) limit for conduction loss calculations. Verify gate drive voltage compatibility with the 1.2 V to 2.5 V threshold range. Check package dimensions against PCB layout constraints for the QFN5x6 form factor.
Part Context
This component belongs to Diotec's dual MOSFET lineup designed for compact power applications. It utilizes silicon technology and offers enhanced reliability through avalanche testing. The part integrates two N-channel devices in a single surface-mount package to reduce board space.
Replacement Considerations
Check pinout compatibility and thermal resistance values before substituting. Verify that alternative parts meet the 60 V VDSS and 35 A ID requirements. Ensure the replacement package matches the QFN5x6 footprint for direct mounting.
