DI040P04D1

$0.27

Description：MOSFET DPAK P -40V -40A
Series：-
Mfr：Diotec Semiconductor
Package：Bulk

SKU:ef1e0bf0c3ec Category: Single FETs, MOSFETs Brand: Diotec Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET DPAK P -40V -40A
Series：-
Mfr：Diotec Semiconductor
Package：Bulk
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：15mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：59 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：3538 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：52W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252 (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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DI040P04D1

Overview

The DI040P04D1 is a P-Channel Power MOSFET manufactured by Diotec Semiconductor, designed for commercial and industrial applications. It features an advanced trench technology providing low on-state resistance and fast switching capabilities. The device operates with a drain-source voltage of -40 V and supports continuous drain currents up to -40 A at 25°C case temperature. Key electrical parameters include a maximum RDS(on) of 15 mΩ at VGS = -10 V and ID = -10 A, and a total gate charge of 59 nC. It offers a power dissipation rating of 52 W and is avalanche rated with an energy capability of 51 mJ.

Feature Summary

Advanced Trench Technology for optimized performance
Low on-state resistance and low gate charge
Fast switching times suitable for high-frequency applications
Avalanche rated for robust operation under inductive loads

Applications

DC/DC Converters
Power Supplies
DC Drives
Synchronous Rectifiers

Procurement Notes

Verify the specific ordering suffix when purchasing. The base model DI040P04D1 represents the standard commercial/industrial grade. Suffixes such as -Q indicate AEC-Q101 compliance, while -AQ denotes AEC-Q101 qualification. Confirm that the required automotive or commercial grade matches your design specifications before finalizing procurement to ensure regulatory and reliability alignment.

Selection Notes

Select this component for designs requiring a P-Channel MOSFET with high current handling and low conduction losses. Ensure the thermal management strategy accounts for the 52 W power dissipation limit at 25°C case temperature. Verify that the gate drive voltage meets the threshold requirements for full enhancement. Consider the avalanche energy rating if the application involves inductive switching or potential overvoltage events.

Part Context

This part belongs to Diotec's P-Channel Power MOSFET lineup, utilizing advanced trench technology to achieve low RDS(on). It is housed in a TO-252AA (D-Pak) package, which facilitates surface mount assembly. The device is compliant with RoHS directives (excluding exemption 7a-I) and REACH regulations. It is intended for standard commercial and industrial grade applications rather than specialized automotive or military environments unless specified by the suffix.