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Product Detailed Parameters
- Description：MOSFET POWERQFN 3X3 P -40V -40A
- Series：-
- Mfr：Diotec Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：15mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：59 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3538 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：22.7W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-QFN (3x3)
- Package / Case：8-PowerWDFN
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Overview
The DI040P04PT is a P-Channel Power MOSFET manufactured by Diotec Semiconductor, housed in a compact QFN3x3 (DFN3030) surface-mount package. It features a drain-source voltage rating of -40 V and supports continuous drain currents up to 40 A at 25°C or 30 A at 100°C case temperature. The device exhibits a low on-state resistance of less than 15 mΩ at VGS = 4.5 V and ID = 8 A. With a maximum junction temperature of 175°C and power dissipation of 31.2 W at 25°C, it offers robust thermal performance for high-current applications.
Feature Summary
- Compact QFN3x3 footprint with low profile height for space-constrained designs
- Low on-state resistance to minimize conduction losses
- Fast switching times and low gate charge for efficient operation
- High junction temperature capability up to 175°C
Applications
- Power Management Units
- Battery powered devices
- Load Switches
- Polarity Protection circuits
Procurement Notes
Verify the specific suffix when ordering: standard versions are commercial/industrial grade, while suffixes -Q indicate AEC-Q101 compliance and -AQ indicates AEC-Q101 qualification. Confirm RoHS compliance status and REACH requirements during procurement. Ensure the supplier provides the correct datasheet version matching the manufacturing date code.
Selection Notes
Select this component for applications requiring high current handling in a small form factor. The low RDS(on) ensures efficiency in battery-powered systems. Consider the thermal resistance values for PCB layout design. Verify that the operating voltage and current limits align with the system's peak demands and safety margins.
Part Context
This part belongs to Diotec's P-Channel MOSFET lineup designed for power management. It complements N-Channel variants like the DI040N04PT. The QFN3x3 package is shared across several high-current Diotec MOSFETs, offering a standardized footprint for designers integrating multiple power switches.
Replacement Considerations
Check pinout compatibility and electrical ratings against alternatives. Suffixes -Q and -AQ denote automotive grades; ensure the replacement matches the required reliability standard. Verify thermal characteristics and package dimensions for direct substitution.
