DI045N04PT-AQ

$0.19

Description：MOSFET POWERQFN 3X3 N 45V
Series：-
Mfr：Diotec Semiconductor
Package：Bulk

SKU:e11f09f6d2f4 Category: Single FETs, MOSFETs Brand: Diotec Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET POWERQFN 3X3 N 45V
Series：-
Mfr：Diotec Semiconductor
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：45 V
Current - Continuous Drain (Id) @ 25°C：45A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：8.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：14 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：825 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：41.7W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：8-QFN (3x3)
Package / Case：8-PowerVDFN

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DI045N04PT-AQ

Overview

The DI045N04PT-AQ is an N-Channel Power MOSFET in a QFN3x3 package. It features a Drain-Source voltage (VDSS) of 45 V and continuous Drain current (ID) of 45 A at 25°C case temperature. The on-state resistance (RDS(on)) is typically 7.5 mΩ at VGS=10V and 8.5 mΩ maximum at VGS=4.5V. Peak pulse drain current reaches 160 A, with power dissipation rated at 41.7 W. The device supports a junction temperature up to 150°C and includes avalanche energy ratings.

Feature Summary

Logic level gate drive capability for efficient control
Avalanche rated with 100% avalanche testing
Low profile height and tiny space-saving package design
Fast switching times combined with low gate charge

Applications

Power Management Units
Battery powered devices
Load Switches
Polarity Protection

Procurement Notes

Verify the specific suffix -AQ indicates the component is currently undergoing AEC-Q101 qualification rather than holding full compliance. Confirm the exact thermal derating curves required for your specific PCB copper pad area, as power dissipation ratings depend heavily on mounting conditions. Ensure the QFN3x3 footprint matches your layout constraints before finalizing procurement.

Selection Notes

Select this component when a compact QFN3x3 form factor is required alongside high current handling capabilities. The logic level gate drive makes it suitable for systems driven by lower voltage control signals. Consider the thermal resistance characteristics if operating near the maximum junction temperature limits in confined spaces.

Part Context

This part belongs to Diotec's N-Channel Power MOSFET lineup designed for commercial and industrial grade applications. It utilizes silicon technology within a surface-mountable PowerQFN 3x3 housing. The product line emphasizes low on-state resistance and fast switching performance for modern power management requirements.