DI048N04PQ2-AQ

Overview

The DI048N04PQ2-AQ is a dual N-channel power MOSFET manufactured by Diotec Semiconductor. It features a QFN5x6-Dual package with a drain-source voltage (VDSS) of 40 V and a continuous drain current (ID) of 48 A at TC = 25°C. The device exhibits a low on-state resistance (RDS(on)) of approximately 8 mΩ at VGS = 10 V. It supports a maximum junction temperature (Tjmax) of 175°C and has a power dissipation rating of 24 W at TC = 25°C. The component is avalanche rated with an energy capability of 36 mJ and complies with the AEC-Q101 automotive standard.

Feature Summary

• Dual MOSFET configuration in a low-profile, space-saving package
• Low on-state resistance for efficient power handling
• Fast switching times with low gate charge
• Avalanche rated for robust operation

Applications

• DC/DC Converters
• Power Supplies
• DC Drives
• Synchronous Rectifiers

Procurement Notes

Verify the specific suffix -AQ to confirm AEC-Q101 qualification status as documented in the official datasheet. Ensure that the procurement specifications align with the thermal management requirements for the QFN5x6-Dual package. Confirm compliance with RoHS, REACH, and conflict minerals regulations prior to finalizing orders.

Selection Notes

Select this component when a compact dual N-channel solution is required for 40V applications. The 48A current rating and 8mΩ RDS(on) make it suitable for high-efficiency designs. Consider the 175°C junction temperature limit for high-temperature environments. Verify PCB copper pad dimensions to achieve the specified thermal resistance values.

Part Context

This part belongs to Diotec's Dual N-Channel Power MOSFET series designed for commercial and industrial grade applications. The -AQ suffix indicates AEC-Q101 qualification, distinguishing it from standard commercial versions. It utilizes a QFN5x6-Dual case material compliant with UL 94V-0 standards.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Evaluate alternatives based on matching VDSS, ID, RDS(on), and package dimensions while ensuring equivalent thermal and electrical characteristics.

FAQ

What is the maximum junction temperature for the DI048N04PQ2-AQ?

The maximum junction temperature (Tj) is +175°C.

Does the DI048N04PQ2-AQ support avalanche operation?

Yes, the device is avalanche rated with a single pulse avalanche energy (EAS) of 36 mJ under specified test conditions.

What does the -AQ suffix indicate for this component?

The -AQ suffix indicates that the component is AEC-Q101 qualified.