DI048N04PQ2

DI048N04PQ2

$1.29
  • Description:MOSFET 2N-CH 40V 48A 8TDSON
  • Series:-

SKU:f80489d6aca0 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 40V 48A 8TDSON
  • Series:-
  • Mfr:Diotec Semiconductor
  • Package:Bulk
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel
  • FET Feature:-
  • Drain to Source Voltage (Vdss):40V
  • Current - Continuous Drain (Id) @ 25°C:48A (Tc)
  • Rds On (Max) @ Id, Vgs:9.6mOhm @ 12A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:48nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:2270pF @ 20V
  • Power - Max:27W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-PowerTDFN
  • Supplier Device Package:TDSON-8-4
  • Grade:-
  • Qualification:-

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DI048N04PQ2

Overview

The DI048N04PQ2 is a dual N-channel power MOSFET manufactured by Diotec Semiconductor. It features a QFN5x6-Dual package with a drain-source voltage (VDSS) of 40 V and a continuous drain current (ID) of 48 A at TC = 25°C. The device exhibits a typical on-state resistance (RDS(on)) of 8 mΩ at VGS = 10 V and ID = 12 A, with a maximum of 11.5 mΩ. Power dissipation is rated at 28.8 W at 25°C case temperature. Key dynamic parameters include a total gate charge (Qg) of 48 nC at VGS = 10 V, turn-on delay time of 17 ns, and rise time of 30 ns. The junction temperature range spans from -55°C to +175°C.

Feature Summary

  • Dual MOSFET configuration in a low-profile, space-saving package
  • Low on-state resistance for efficient power handling
  • Fast switching times with low gate charge
  • Avalanche rated capability for robust operation

Applications

  • DC/DC Converters
  • Power Supplies
  • DC Drives
  • Synchronous Rectifiers

Procurement Notes

Verify the specific suffix when ordering. The base model DI048N04PQ2 represents the standard commercial or industrial grade. Suffixes such as -Q indicate AEC-Q101 compliance, while -AQ denotes AEC-Q101 qualification. Confirm these designations against project requirements to ensure correct component selection.

Selection Notes

Select this component for applications requiring high current density in a compact footprint. The 48 A rating and 8 mΩ RDS(on) support efficient synchronous rectification. Ensure thermal management accounts for the < 5.2 K/W junction-to-case thermal resistance. Verify that the 40 V breakdown voltage provides adequate margin for the target DC bus voltage.

Part Context

This part belongs to Diotec's PowerQFN series, designed for high-efficiency power management. It serves as a dual-channel alternative to single MOSFETs, reducing board space and simplifying layout for half-bridge or full-bridge topologies. The QFN5x6-Dual form factor balances electrical performance with mechanical stability for automated assembly.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Cross-referencing requires matching VDSS, ID, RDS(on), and package dimensions independently.

DI048N04PQ2DI048N04PQ2
$1.29
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