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The DI048N04PQ2 is a dual N-channel power MOSFET manufactured by Diotec Semiconductor. It features a QFN5x6-Dual package with a drain-source voltage (VDSS) of 40 V and a continuous drain current (ID) of 48 A at TC = 25°C. The device exhibits a typical on-state resistance (RDS(on)) of 8 mΩ at VGS = 10 V and ID = 12 A, with a maximum of 11.5 mΩ. Power dissipation is rated at 28.8 W at 25°C case temperature. Key dynamic parameters include a total gate charge (Qg) of 48 nC at VGS = 10 V, turn-on delay time of 17 ns, and rise time of 30 ns. The junction temperature range spans from -55°C to +175°C.
Verify the specific suffix when ordering. The base model DI048N04PQ2 represents the standard commercial or industrial grade. Suffixes such as -Q indicate AEC-Q101 compliance, while -AQ denotes AEC-Q101 qualification. Confirm these designations against project requirements to ensure correct component selection.
Select this component for applications requiring high current density in a compact footprint. The 48 A rating and 8 mΩ RDS(on) support efficient synchronous rectification. Ensure thermal management accounts for the < 5.2 K/W junction-to-case thermal resistance. Verify that the 40 V breakdown voltage provides adequate margin for the target DC bus voltage.
This part belongs to Diotec's PowerQFN series, designed for high-efficiency power management. It serves as a dual-channel alternative to single MOSFETs, reducing board space and simplifying layout for half-bridge or full-bridge topologies. The QFN5x6-Dual form factor balances electrical performance with mechanical stability for automated assembly.
Publicly confirmed substitute part numbers are not available in the provided documentation. Cross-referencing requires matching VDSS, ID, RDS(on), and package dimensions independently.